Xi'an Institute of Optics and Precision Mechanics,CAS
Manufacture of semiconductor light-emitting element | |
其他题名 | Manufacture of semiconductor light-emitting element |
KUSUKI TOSHIHIRO; OKAZAKI JIRO | |
1986-07-30 | |
专利权人 | FUJITSU LTD |
公开日期 | 1986-07-30 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To prevent electric current control function at a P-N reverse bonding unit from damaging by a method wherein a P-layer is provided between a P-layer and an (N) layer at the stage of forming a buried layer of BH type (buried hetero type) semiconductor laser. CONSTITUTION:A non-doped InGaAsP active layer 2 and P-InP layer are 3 laminated on an N-InP substrate 1 and a stripe unit DH (double hetero) constitution is formed performing mesa-etching. A P-InP 4, an N-InP 5, a P-InP 7 and a P-InP 6 are subjected to grow by means of liquid-phase epitaxial growth method. Diffusion of dopant Zn is absorbed by the third layer P-InP 7 at the time of the fourth layer growth by means of laminating the third layer P-InP 7 on the secondary N-InP 5, and diffusion to the secondary N-InP 5 is prevented, then an electric control layer which is N-P reverse-bonding is not damaged. |
其他摘要 | 用途:防止PN反向键合单元的电流控制功能通过在形成掩埋的阶段在P +层和(N)层之间提供P - 层的方法来防止损坏BH型(掩埋异型)半导体激光器层。组成:在N-InP衬底1上层叠未掺杂的InGaAsP有源层2和P-InP层,并执行台面蚀刻形成条带单元DH(双异质)构造。通过液相外延生长方法使P-InP 4,N-InP 5,P - InP 7和P + -InP 6生长。通过在第二层N-InP 5上层叠第三层P - > InP 7,并且扩散到第四层,在第四层生长时第三层P - > InP 7吸收掺杂剂Zn的扩散。如果防止二次N-InP 5,则不会损坏NP反向键合的电控制层。 |
申请日期 | 1985-01-22 |
专利号 | JP1986168986A |
专利状态 | 失效 |
申请号 | JP1985010613 |
公开(公告)号 | JP1986168986A |
IPC 分类号 | H01L21/208 | H01L33/14 | H01L33/30 | H01S5/00 | H01L33/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/88831 |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJITSU LTD |
推荐引用方式 GB/T 7714 | KUSUKI TOSHIHIRO,OKAZAKI JIRO. Manufacture of semiconductor light-emitting element. JP1986168986A[P]. 1986-07-30. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1986168986A.PDF(174KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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