Semiconductor laser

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor laser
其他题名	Semiconductor laser
	YOSHITOSHI KEIICHI
	1983-09-26
专利权人	SANYO DENKI KK
公开日期	1983-09-26
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a semiconductor laser which can be simply controlled for the thickness of a grown layer by forming a side groove which extends in parallel with the groove at both side of the groove and has the same depth as the groove and a width larger than that of the groove. CONSTITUTION:The first clad layer 3 made of P type Ga9.5Al9.5As is grown at growth start temperature of 780 deg.C and at gradually cooling speed of 0.5 deg.C/min on a substrate 1 formed with a groove 2 and side grooves 10 in such a manner that the thickness of the layer at the flat part is approx. 0.1mum and a recess is formed and bent on the surface on the groove 2. Since growing component is dispersed and concentrated in each groove, the growing speed at the groove is decelerated. Then, when an active layer 4 made of Ga0.7Al0.3As is epitaxially grown continued to the layer 3, the thickness of the layer on the groove 2 becomes 0.1mum in approx. 30 sec. This is because the surface of the layer 3 is bent in recess shape on each groove so that growing component is dispersed and concentrated at the bent part with the result that the growing speed is decelerated on the groove 2. With this structure, the growing speeds of the layers 3, 4 are delayed as compared with the conventional one, thereby simplifying the control of the thickness of the layer.
其他摘要	目的：通过形成一个侧凹槽来获得半导体激光器，该半导体激光器可以简单地控制生长层的厚度，该侧凹槽与凹槽两侧的凹槽平行延伸并且具有与凹槽相同的深度和宽度大于凹槽的宽度。凹槽的那个。组成：由P型Ga9.5Al9.5As制成的第一个包层3在780摄氏度的生长开始温度和0.5℃/分钟的逐渐冷却速度下在形成有凹槽2和侧面的基板1上生长。凹槽10使得平坦部分处的层的厚度约为10μm。在凹槽2的表面上形成0.1μm的凹槽并弯曲。由于生长成分在每个凹槽中分散和集中，凹槽处的生长速度减慢。然后，当由Ga0.7Al0.3As制成的有源层4连续地外延生长到层3时，沟槽2上的层的厚度变为约0.1μm。 30秒这是因为层3的表面在每个凹槽上弯曲成凹陷形状，使得生长的组分在弯曲部分处分散和集中，结果是生长速度在凹槽2上减速。利用这种结构，生长速度与常规层相比，层3,4的延迟被延迟，从而简化了层厚度的控制。
申请日期	1982-03-19
专利号	JP1983162088A
专利状态	失效
申请号	JP1982045420
公开（公告）号	JP1983162088A
IPC 分类号	H01L21/208 \| H01S5/00 \| H01S5/223 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/88816
专题	半导体激光器专利数据库
作者单位	SANYO DENKI KK
推荐引用方式 GB/T 7714	YOSHITOSHI KEIICHI. Semiconductor laser. JP1983162088A[P]. 1983-09-26.

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