Semiconductor light emitting device

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	Semiconductor light emitting device
其他题名	Semiconductor light emitting device
	TANAKA KAZUHIRO
	1987-09-02
专利权人	FUJITSU LTD
公开日期	1987-09-02
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To output highly efficient high-power laser light, by forming a lightguide having one output end, which is coupled with an active layer with light, at the side surface of said active layer, thereby providing a laser structure. CONSTITUTION:On the entire surface of an n-InP substrate 8, an n-InP clad layer 9, a non-doped InGaAsP layer 10, a p-InP clad layer 12, and a p-InGaAsP contact layer 13 are epitaxially grown. Then, an SiO2 film 18 and the like are laminated as etching masks. Patterning is performed by an ordinary lithography method. The active layer and a lightguide layer 11 are made to remain in a mesa shape and the other parts thereof are etched away until reaching the n-InP layer 9. Then the mesa parts are embedded as high resistance layers 14 by using a non-doped InP layer or Fe doped InP layer. The SiO2 film 18 is once removed, and an insulating SiO2 film 15 is newly laminated. a window is opened at a laser active region part. An (n) electrode 16 and a (p) electrode 17 are formed. Thus the highly efficient, high power laser is obtained, and the required monitoring light can be secured.
其他摘要	目的：通过在所述有源层的侧表面处形成具有一个输出端（其与具有光的有源层耦合）的光导，从而输出高效率的高功率激光，从而提供激光器结构。构成：在n-InP衬底8的整个表面上，外延地形成n-InP包层9，非掺杂InGaAsP层10，p-InP包层12和p + -InGaAsP接触层13长大的。然后，层叠SiO 2膜18等作为蚀刻掩模。通过普通光刻法进行图案化。使有源层和光导层11保持台面形状，并且其它部分被蚀刻掉直到到达n-InP层9.然后通过使用未掺杂的n-InP层9将台面部分嵌入作为高电阻层14 InP层或Fe掺杂的InP层。一旦除去SiO 2膜18，并且新层叠绝缘SiO 2膜15。在激光活性区域部分打开窗口。形成（n）电极16和（p）电极17。因此，获得了高效率，高功率的激光器，并且可以确保所需的监视光。
申请日期	1986-02-26
专利号	JP1987199086A
专利状态	失效
申请号	JP1986042405
公开（公告）号	JP1987199086A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/88668
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	TANAKA KAZUHIRO. Semiconductor light emitting device. JP1987199086A[P]. 1987-09-02.

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