Refractive index waveguide type semiconductor laser device

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	Refractive index waveguide type semiconductor laser device
其他题名	Refractive index waveguide type semiconductor laser device
	TETSU HIDEO
	1992-01-30
专利权人	VICTOR CO OF JAPAN LTD
公开日期	1992-01-30
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a refractive index waveguide type semiconductor laser device prevented from generation of a crystalline defect by locating the boundaries of buried layers of a plurality of kinds on the top part of a second clad layer of a ridge structure. CONSTITUTION:A stripe 5 of an SiO2 film is etched and the width of the stripe 5 of this SiO2 film is processed to a width smaller than the length of the upper side of ridge structure part of a p-clad layer by 300Angstrom on both sides respectively. Then, the block layers 6a, 6b of n - GaAs are made to grow. A t this time, the block layers 6a, 6b are not grown the stripe 5 of the SiO2 film but grow only on the surface of the p-clad layer 4 being etched half, and the block layers 6a,6b grow also on both parts having no stripe 5 of the SiO2 film of the upper side of the ridge structure part of the p-clad layer 4. Later, the stripe 5 of the SiO2 film is removed by a hydro-fluoric acid group solution, and a contact layer of p-GaAs is made to grow on the block layers 6a, 6b and the p-clad layer 4 by an MOCVD method.
其他摘要	目的：通过在脊结构的第二包层的顶部设置多种埋层的边界，以获得防止产生晶体缺陷的折射率波导型半导体激光器件。组成：蚀刻SiO2薄膜的条纹5，并将该SiO2薄膜的条纹5的宽度加工成宽度小于p-包层的脊结构部分的上侧的长度，两侧的宽度为300埃。分别。然后，使n-GaAs的阻挡层6a，6b生长。此时，阻挡层6a，6b不是生长在SiO2薄膜的条纹5上，而是仅在被蚀刻一半的p-包覆层4的表面上生长，并且阻挡层6a，6b也在两个部分上生长。在p-包层4的脊结构部分的上侧没有条纹5的SiO2膜。之后，通过氢氟酸基团溶液和接触层去除SiO2膜的条纹5。通过MOCVD法使p-GaAs在阻挡层6a，6b和p覆层4上生长。
申请日期	1990-05-22
专利号	JP1992027185A
专利状态	失效
申请号	JP1990132305
公开（公告）号	JP1992027185A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/88625
专题	半导体激光器专利数据库
作者单位	VICTOR CO OF JAPAN LTD
推荐引用方式 GB/T 7714	TETSU HIDEO. Refractive index waveguide type semiconductor laser device. JP1992027185A[P]. 1992-01-30.

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