Liquid phase epitaxial growth

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	Liquid phase epitaxial growth
其他题名	Liquid phase epitaxial growth
	KUME ICHIROU; TANAKA TOSHIO
	1983-10-25
专利权人	MITSUBISHI DENKI KK
公开日期	1983-10-25
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To easily control thickness of active layer by setting only the melt for active layer growth to supersaturated condition and adequately adjusting such supersaturated condition. CONSTITUTION:On the occasion of forming a clad layer, active clad layer and contact layer on a substrate using a slide boat by the epitaxial growth method, the melts of respective reservoirs have been set to the condition nearer to the saturating point at the growth temperature of each reservoir but the melt for growth of active layer is then set to the saturated condition for the epitaxial growth. When degree of oversaturation increases, thickness of active layer also becomes thicker, and when degree of oversaturation is set to 160% with reference to the saturation point, the active layer can be set as thin as about 0.1+ or -0.03mum. When an active layer is to be formed on a GaAs substrate, the GaAs of the supersaturated component exists as the core in the melt and it also grows up on the core during growth of the active layer because the growth of active layer is reduced. By this method, a thin active layer can be obtained easily through the control of thickness and a laser diode which operates on a lower threshold current can be formed.
其他摘要	目的：通过仅将有效层生长的熔体设置为过饱和状态并充分调节这种过饱和状态，轻松控制活性层的厚度。组成：使用滑动船通过外延生长方法在基板上形成包层，有源包层和接触层时，各个储存器的熔体已设置为在生长温度下更接近饱和点的条件然后将每个储层的熔体用于外延生长的饱和条件。当过饱和度增加时，有源层的厚度也变厚，并且当过饱和度相对于饱和点设定为160％时，有源层可以设定为约0.1+或-0.03μm的薄。当要在GaAs衬底上形成有源层时，过饱和组分的GaAs作为熔体中的核存在，并且在有源层的生长期间它也在核上生长，因为有源层的生长减少。通过这种方法，可以通过控制厚度容易地获得薄的有源层，并且可以形成在较低阈值电流下工作的激光二极管。
申请日期	1982-04-19
专利号	JP1983182224A
专利状态	失效
申请号	JP1982066803
公开（公告）号	JP1983182224A
IPC 分类号	H01S5/00 \| H01L21/208 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/88570
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KK
推荐引用方式 GB/T 7714	KUME ICHIROU,TANAKA TOSHIO. Liquid phase epitaxial growth. JP1983182224A[P]. 1983-10-25.

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