Method of manufacturing an optoelectronic semiconductor device comprising a mesa

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	Method of manufacturing an optoelectronic semiconductor device comprising a mesa
其他题名	Method of manufacturing an optoelectronic semiconductor device comprising a mesa
	POMP, HENDRIK, GERARD; VAN BAKEL, BERNARDUS, ALBERTUS, HENRICUS; BOKHORST, JOHANNA, MARIA; WEEGELS, LEO, MARIA
	1998-10-14
专利权人	UNIPHASE OPTO HOLDINGS, INC.
公开日期	1998-10-14
授权国家	欧洲专利局
专利类型	发明申请
摘要	An optoelectronic device, such as a laser of the ridge waveguide type, can be provided with the necessary mesa (14) by means of wet or dry etching with a mask (20). The etching process is stopped when an etching stopper layer (5) is reached. A laser obtained by wet etching is indeed least expensive, but it is found to have a kink in its power-current characteristic at an undesirably low power value. According to the invention, such a laser must be manufactured in that the mask (20) used is given a width which is (much) greater than the width desired for the mesa (14), and in that, after a (preferably wet) etching process down to or down to close to the etching stopper layer (5), etching is continued with a wet isotropic etchant which is selective relative to the etching stopper layer (5) until the mesa (14) formed has the desired width. A very narrow and steep mesa (14) can thus be realized in an inexpensive manner. It is found that a laser with such a mesa (14) does not exhibit the kink mentioned above until at a comparatively high power. When used in the GaAs/A1GaAs material system, the invention results in a laser which is highly suitable for use as a writing laser in a system for optical registration, or as a pumping laser in a system for glass fiber communication. The two etching steps mentioned may be carried out with one and the same wet etchant, for example an etchant based on C6H8O7 (citric acid) in the case of the GaAs/A1GaAs material system. It is alternatively possible, for example, to use two etchants, for example the etchant based on citric acid mentioned above and a second etchant based on Na2Cr2O7.
其他摘要	通过利用掩模（20）的湿法或干法蚀刻，可以为诸如脊形波导型激光器的光电器件提供必要的台面（14）。当到达蚀刻停止层（5）时停止蚀刻过程。通过湿法蚀刻获得的激光器确实是最便宜的，但是发现其功率 - 电流特性在不希望的低功率值下具有扭结。根据本发明，必须制造这种激光器，因为所使用的掩模（20）的宽度（大大）大于台面（14）所需的宽度，并且在（优选地是湿的）之后在向下或向下接近蚀刻停止层（5）的蚀刻过程中，用湿各向同性蚀刻剂继续蚀刻，该蚀刻剂相对于蚀刻停止层（5）是选择性的，直到形成的台面（14）具有所需宽度。因此可以以便宜的方式实现非常窄且陡峭的台面（14）。发现具有这种台面（14）的激光器在相对高的功率下不会表现出上述扭结。当用于GaAs / AlGaAs材料系统时，本发明产生的激光器非常适合用作光学配准系统中的写入激光器，或者用作玻璃纤维通信系统中的泵浦激光器。所提到的两个蚀刻步骤可以用同一种湿蚀刻剂进行，例如在GaAs / AlGaAs材料系统的情况下基于C6H8O7（柠檬酸）的蚀刻剂。或者，例如，可以使用两种蚀刻剂，例如基于上述柠檬酸的蚀刻剂和基于Na2Cr2O7的第二蚀刻剂。
申请日期	1997-07-16
专利号	EP0870352A1
专利状态	失效
申请号	EP1997929451
公开（公告）号	EP0870352A1
IPC 分类号	H01S5/00 \| H01L21/306 \| H01L33/00 \| H01S5/22 \| H01S5/042 \| H01S5/20 \| H01S3/19
专利代理人	-
代理机构	SMEETS, EUGENIUS THEODORUS J. M.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/88544
专题	半导体激光器专利数据库
作者单位	UNIPHASE OPTO HOLDINGS, INC.
推荐引用方式 GB/T 7714	POMP, HENDRIK, GERARD,VAN BAKEL, BERNARDUS, ALBERTUS, HENRICUS,BOKHORST, JOHANNA, MARIA,et al. Method of manufacturing an optoelectronic semiconductor device comprising a mesa. EP0870352A1[P]. 1998-10-14.