Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser element | |
其他题名 | Semiconductor laser element |
YAMAMOTO SABUROU; MURATA KAZUHISA; HAYASHI HIROSHI; TAKENAKA TAKUO | |
1982-10-01 | |
专利权人 | SHARP KK |
公开日期 | 1982-10-01 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To perform a laser oscillation by a low driving current by a method wherein an inner stripe construction, in which an N type active layer, having the prescribed carrier density or above and the film thickness formed in proportion to the length of the hole diffusion based on the non-generation recombination of minor carrier, is provided on a substrate. CONSTITUTION:An N type GaAs current blocking layer, having the carrier density of 3X10cm or above, is provided on a P type GaAs substrate 5 in the thickness of 0.6mum, and a stripe-shape groove 7 of 5mum in width is provided on the current blocking layer. On this groove 7, a Zn-doped P type first clad layer 1, an Si-doped N type active layer 2, a Te-doped N type second clad layer 3, and a Te-doped N type cap layer 4 are successively deposited. A P-side electrode 9 and an N-side electrode 8 are formed for use as an inner stripe semiconductor laser element. Accordingly, a spot type laser oscillation can be performed by applying a driving current of a low threshold value by the help of the stripe construction to be used for current strangulation located in the vicinity of the active layer. |
其他摘要 | 目的:通过一种内部条纹结构,通过低驱动电流进行激光振荡,其中N型有源层具有规定的载流子密度或以上,并且膜厚度与空穴扩散的长度成比例地形成基于次载流子的非生成重组,在基板上提供。组成:在P型GaAs基板5上提供厚度为0.6μm的N型GaAs电流阻挡层,其载流子密度为3×10 18 cm -3或更高,条形槽7在电流阻挡层上提供5μm宽的电流。在该凹槽7上,依次沉积Zn掺杂的P型第一包层1,Si掺杂的N型有源层2,Te掺杂的N型第二包层3和Te掺杂的N型盖层4。 。形成P侧电极9和N侧电极8以用作内条半导体激光元件。因此,可以通过借助于条纹结构施加低阈值的驱动电流来执行点型激光振荡,以用于位于有源层附近的电流扼流。 |
申请日期 | 1981-03-25 |
专利号 | JP1982159084A |
专利状态 | 失效 |
申请号 | JP1981044776 |
公开(公告)号 | JP1982159084A |
IPC 分类号 | H01S5/00 | H01S5/223 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/88453 |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP KK |
推荐引用方式 GB/T 7714 | YAMAMOTO SABUROU,MURATA KAZUHISA,HAYASHI HIROSHI,et al. Semiconductor laser element. JP1982159084A[P]. 1982-10-01. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1987058557B2.PDF(258KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论