Manufacture of semiconductor laser

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	Manufacture of semiconductor laser
其他题名	Manufacture of semiconductor laser
	ASAGA TATSUYA
	1990-09-14
专利权人	SEIKO EPSON CORP
公开日期	1990-09-14
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To restrain a resonator end face from deteriorating by a method wherein an optical guide layer is grown, an upper compound semiconductor thin film layer in a region other than the vicinity of the resonator end face is made to grow as being irradiated with light rays so as to be different in thickness from the upper compound semiconductor thin film layer on the optical guide layer. CONSTITUTION:Material gas is introduced into a reaction tube 210 from a material gas introducing system 209 to flow over a heated substrate 211 so as to make a compound semiconductor thin film grow. Ultraviolet rays from an excimer laser 201 are made to irradiate a part which is to serve as a region of a semiconductor laser other than the vicinity of the resonator end face through a mask 206, being not focused on the substrate 211 through a lens 207, during the growth of an optical guide layer 306 and a P-type Al0.35Ga0.65As layer 310. The compound semiconductor thin film is epitaxially grown, then an SiO2 layer 112 is formed, and furthermore electrodes 108 and 109 are built. Then, cleavage is executed along a thin region 313 which is to be the vicinity of the resonator end face to form a semiconductor laser of end face LOC structure. By this setup, a semiconductor laser, whose end face is restrained from deteriorating and which is large in maximum optical output and long in service life, can be obtained.
其他摘要	用途：为了通过生长光导层的方法抑制谐振器端面的劣化，使谐振器端面附近以外的区域中的上部化合物半导体薄膜层随着光线照射而生长因此，与导光层上的上部化合物半导体薄膜层的厚度不同。组成：物料气体从原料气体引入系统209引入反应管210，流过加热的基板211，以使化合物半导体薄膜生长。来自准分子激光器201的紫外线通过掩模206照射除了谐振器端面附近的半导体激光器区域的部分，不通过透镜207聚焦在基板211上，在光导层306和P型Al0.35Ga0.65As层310的生长期间，外延生长化合物半导体薄膜，然后形成SiO2层112，并且还构建电极108和109。然后，沿着将成为谐振器端面附近的薄区域313执行解理，以形成端面LOC结构的半导体激光器。通过这种设置，可以获得半导体激光器，其端面受到抑制而劣化并且最大光输出大且使用寿命长。
申请日期	1989-03-07
专利号	JP1990232982A
专利状态	失效
申请号	JP1989054221
公开（公告）号	JP1990232982A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/88423
专题	半导体激光器专利数据库
作者单位	SEIKO EPSON CORP
推荐引用方式 GB/T 7714	ASAGA TATSUYA. Manufacture of semiconductor laser. JP1990232982A[P]. 1990-09-14.

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