Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	ISHII MITSUO
	1988-07-21
专利权人	MITSUBISHI ELECTRIC CORP
公开日期	1988-07-21
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a semiconductor laser device which can deflect and scan a radiating laser beam at high speed without the need for a mechanical and external driving system by a method wherein a light-guide region formed by being linked with an active region inside an active layer in the radiating direction of the laser beam and a control electrode to partially inject a carrier into the light-guide region are formed. CONSTITUTION:At a semiconductor laser device where a lower clad layer 2, an active layer 3 and an upper clad layer 4 are deposited in succession on a semiconductor substrate 1, the following are formed: a light-guide region 5 which is formed by being linked with an active region 3a inside the active layer 3 and whose energy gap is bigger than that of the active region 3a; control electrodes 8-10 which are used to inject a carrier into the light-guide region 5 partially. For example, if biases V8-V10 to be applied to the control electrodes 8-10 are set to appropriate values of V8>V9>V10, a beam of light whose phase is uniform up to the active region 3a is phase-modulated at the light-guide region 5; a laser beam 14 is deflected at an angle thetafrom the edge face of a resonator toward the control electrode 10 and is then radiated. By this method, a high-speed scanning operation is possible as compared with a mechanical deflection and scanning operation of the laser beam.
其他摘要	目的：获得一种半导体激光装置，该装置能够高速偏转和扫描辐射激光束而无需机械和外部驱动系统，其方法是通过与活动区域内的有源区域连接形成的光导区域形成激光束的辐射方向上的层和将载流子部分地注入光导区域的控制电极。组成：在半导体衬底1上依次沉积下包层2，有源层3和上包层4的半导体激光器件中，形成如下：光导区域5，其形成为与有源层3内的有源区3a连接，其能隙大于有源区3a的能隙;控制电极8-10用于将载体部分地注入光导区域5。例如，如果要施加到控制电极8-10的偏置V8-V10被设置为适当的V8> V9> V10的值，则相位均匀到达有源区域3a的光束在相位处被相位调制。光导区域5;激光束14从谐振器的边缘面朝向控制电极10以一角度偏转，然后被辐射。通过这种方法，与激光束的机械偏转和扫描操作相比，可以进行高速扫描操作。
申请日期	1987-01-17
专利号	JP1988177490A
专利状态	失效
申请号	JP1987008466
公开（公告）号	JP1988177490A
IPC 分类号	H01S5/00 \| H01S5/042 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/88403
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	ISHII MITSUO. Semiconductor laser device. JP1988177490A[P]. 1988-07-21.

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