Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser device | |
其他题名 | Semiconductor laser device |
YOSHIZAWA MISUZU; INOUE HIROAKI; TATENO KIMIO; OSHIMA MASAHIRO | |
1992-07-28 | |
专利权人 | HITACHI LTD |
公开日期 | 1992-07-28 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To obtain a semiconductor laser device having big secondary harmonics output by guiding secondary harmonics of a fundamental wave through a transparent waveguide path to reflect outward and to specify output of the secondary harminics. CONSTITUTION:A transparent waveguide path 1 is brought sufficiently near an active layer 3 so as to efficiently perform Cherenkov radiation of the secondary harmonics generated in an active layer 3. Then, while being guided in the transparent waveguide path 1 for outwardly reflicting, its output is made not less than 10 to the output of the fundamental wave. Further, one end of the transparent waveguide path 1 is made semiconical having a vertical sngle theta in order to make the Cherenkov-radiated secondary higher harmonics parallel light. |
其他摘要 | 目的:通过引导基波的二次谐波通过透明波导路径向外反射并指定二次线束的输出来获得具有大二次谐波输出的半导体激光器件。组成:透明波导路径1充分靠近有源层3,以便有效地执行在有源层3中产生的二次谐波的切伦科夫辐射。然后,在透明波导路径1中被引导用于向外重新拼接,其输出对于基波的输出,使其不小于10 -5。此外,透明波导路径1的一端制成具有垂直角度θ的半导体,以使Cherenkov辐射的次级高次谐波平行光。 |
申请日期 | 1990-11-30 |
专利号 | JP1992206791A |
专利状态 | 失效 |
申请号 | JP1990337115 |
公开(公告)号 | JP1992206791A |
IPC 分类号 | H01S5/00 | H01S3/109 | H01S5/042 | H01S5/06 | H01S5/10 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/88335 |
专题 | 半导体激光器专利数据库 |
作者单位 | HITACHI LTD |
推荐引用方式 GB/T 7714 | YOSHIZAWA MISUZU,INOUE HIROAKI,TATENO KIMIO,et al. Semiconductor laser device. JP1992206791A[P]. 1992-07-28. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
US5208827.PDF(250KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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