Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser element | |
其他题名 | Semiconductor laser element |
MATSUMOTO AKIHIRO; HOSOBANE HIROYUKI; MATSUI KANEKI | |
1990-07-12 | |
专利权人 | SHARP CORP |
公开日期 | 1990-07-12 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To provide a long time and stable operation with high output by forming a 2-layer structure outside a stripe region and a light absorption layer near an active layer of a 2-layer structure, and making the Al mixed crystal ratio of the layer farther from the active layer larger than that of the light absorption layer. CONSTITUTION:Clad layers 17, 19 containing Al near an active layer 18, and a stripe region formed by increasing the thickness of the clad layer 17 are provided, and the outside of the stripe region is formed in a 2-layer structure of a current blocking layer 15 and a second buffer layer 14. With such a structure, the average thermal expansion coefficient outside a V-shaped groove 16 can be made substantially equal to that inside the V-shaped groove 16, thereby alleviating the stress concentration of an active layer 18 near both shoulders of the V-shaped groove 16. The current blocking layer 15 near the active layer 18 is a light absorption layer, and the Al mixed crystal ratio of a second buffer layer farther from the active layer 18 is larger than that of the light absorption layer. Thus, a long time and stable operation can be performed with high output. |
其他摘要 | 用途:通过在条纹区域外形成2层结构和在2层结构的有源层附近形成光吸收层,并使该层的Al混晶比率,提供高输出的长时间稳定操作离有源层的距离大于光吸收层的有源层。组成:提供包含有源层18附近的Al的包层17,19,以及通过增加包层17的厚度形成的条带区域,并且条带区域的外部形成为电流的2层结构利用这种结构,V形槽16外部的平均热膨胀系数可以基本上等于V形槽16内部的平均热膨胀系数,从而减轻了活性层的应力集中。在有源层18附近的电流阻挡层15是光吸收层,远离有源层18的第二缓冲层的Al混晶比大于V形沟槽16的两个肩部附近的层18。光吸收层。因此,可以以高输出执行长时间和稳定的操作。 |
申请日期 | 1988-12-29 |
专利号 | JP1990180084A |
专利状态 | 失效 |
申请号 | JP1988334137 |
公开(公告)号 | JP1990180084A |
IPC 分类号 | H01S5/00 | H01S5/042 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/88333 |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP CORP |
推荐引用方式 GB/T 7714 | MATSUMOTO AKIHIRO,HOSOBANE HIROYUKI,MATSUI KANEKI. Semiconductor laser element. JP1990180084A[P]. 1990-07-12. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1990180084A.PDF(184KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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