Xi'an Institute of Optics and Precision Mechanics,CAS
Quantum cascade laser element | |
其他题名 | Quantum cascade laser element |
HIRAYAMA, HIDEKI; LIN, TSUNG-TSE | |
2014-06-25 | |
专利权人 | RIKEN |
公开日期 | 2014-06-25 |
授权国家 | 欧洲专利局 |
专利类型 | 发明申请 |
摘要 | [PROBLEM] To manufacture a quantum cascade laser (QCL) element having a reduced threshold current density (Jth) and an increased maximum operating temperature (Tmax). [SOLUTION] One embodiment of the present invention provides a THz-QCL element (1000) with a QCL structure (100), which is a semiconductor superlattice (100A) sandwiched between a pair of electrodes (20, 30). The semiconductor superlattice (100A) (QCL structure (100)) is provided with an active region (10) that emits THz range electromagnetic waves due to the transition of electrons between sub-bands during application of a voltage to the pair of electrodes, for example. The active region (10) has repeating unit structures (10U) of a thickness, which includes sets of a well layer (10W) and a barrier layer (10B) alternatingly laminated with each other, wherein the well layer (10W) is made of AlxGa1-xAs (where 0 |
其他摘要 | [问题]制造具有降低的阈值电流密度(Jth)和增加的最大工作温度(Tmax)的量子级联激光器(QCL)元件。[解决方案]本发明的一个实施例提供具有QCL结构(100)的THz-QCL元件(1000),其是夹在一对电极(20,30)之间的半导体超晶格(100A)。半导体超晶格(100A)(QCL结构(100))设置有有源区域(10),该有源区域(10)在向该对电极施加电压期间由于子带之间的电子跃迁而发射THz范围的电磁波,用于例。有源区(10)具有厚度的重复单元结构(10U),其包括彼此交替层叠的多组阱层(10W)和阻挡层(10B),其中阱层(10W)由Al x Ga 1-x As(其中0 |
申请日期 | 2012-08-01 |
专利号 | EP2747221A1 |
专利状态 | 申请中 |
申请号 | EP2012819292 |
公开(公告)号 | EP2747221A1 |
IPC 分类号 | H01S5/343 | H01S5/34 | B82Y20/00 | H01S5/00 | H01S5/02 |
专利代理人 | - |
代理机构 | HUEBNER, STEFAN ROLF |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/88309 |
专题 | 半导体激光器专利数据库 |
作者单位 | RIKEN |
推荐引用方式 GB/T 7714 | HIRAYAMA, HIDEKI,LIN, TSUNG-TSE. Quantum cascade laser element. EP2747221A1[P]. 2014-06-25. |
条目包含的文件 | 条目无相关文件。 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论