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Semiconductor laser element
其他题名Semiconductor laser element
SHIMIZU AKIRA
1989-07-11
专利权人CANON INC
公开日期1989-07-11
授权国家日本
专利类型发明申请
摘要PURPOSE:To improve exceedingly the output efficiency of a light having a short wavelength by providing the generating material of the second higher harmonic wave in a resonator, locking up the light having a wavelength lambdain the resonator, and coating a multilayer film so as to pick up the light having a wavelength lambda/2 outside. CONSTITUTION:SHG material (for example, a multiquantum well structure which is composed of LiNbO3, KDP, and MNA and is applied with an electric field an the like) is provided at a region where the light intensity distribution 50 of an oscillation mode on both sides an active layer 21 is not zero. Further, multilayer film coating is performed for end faces 28 and 29 and this element is constructed so that, for example, the reflectivity R(lambda) of a light having a wavelength (lambda) may be 99% and the reflectivity R(lambda/2) of a light having a wavelength (lambda/2) may be 1%. A light 40 having an oscillation wavelength lambda is hardly outgone outside and is converted into the light having the wavelength lambda/2 gradually, while travelling back and forth many times in a resonator and then, is picked up before it is absorbed in the element.
其他摘要目的:通过在共振器中提供第二高次谐波的发生材料,锁定具有波长为λ的共振器的光,从而极大地改善具有短波长的光的输出效率,并且涂覆多层膜以拾取使外部具有波长λ/ 2的光。构成:在振荡模式的光强度分布50在两者上的区域处设置有SHG材料(例如,由LiNbO 3,KDP和MNA构成并施加有电场等的多量子阱结构)有源层21不为零。此外,对端面28和29进行多层膜涂覆,并且该元件被构造为使得例如具有波长(λ)的光的反射率R(λ)可以为99%,并且反射率R(λ/ 2)的波长(λ/ 2)的光可以为1%。具有振荡波长λ的光40几乎不会在外部出现,并且在谐振器中多次前后来回地逐渐转换为具有波长λ/ 2的光,然后在被元件吸收之前被拾取。
申请日期1987-12-28
专利号JP1989175286A
专利状态失效
申请号JP1987334972
公开(公告)号JP1989175286A
IPC 分类号H01S5/00 | H01S3/109 | H01S5/028 | H01S5/06 | H01S5/10 | H01S5/22 | H01S5/227 | H01S3/18
专利代理人-
代理机构-
文献类型专利
条目标识符http://ir.opt.ac.cn/handle/181661/88215
专题半导体激光器专利数据库
作者单位CANON INC
推荐引用方式
GB/T 7714
SHIMIZU AKIRA. Semiconductor laser element. JP1989175286A[P]. 1989-07-11.
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