Manufacture of semiconductor laser

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	Manufacture of semiconductor laser
其他题名	Manufacture of semiconductor laser
	ONOUCHI TOSHIHIKO; NOJIRI HIDEAKI
	1991-05-28
专利权人	CANON INC
公开日期	1991-05-28
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To provide a high-efficiency semiconductor laser while improving production efficiency and device reliability by a method in which semiconductor GaAs is formed in stripes on a wafer and the wafer is subjected to two steps of liquid phase epitaxy. CONSTITUTION:A mask layer is etched with HCl and H2O2 to form a strip of mask 20. A cap layer 15 is exposed where the mask layer has been removed. The cap layer and Ga malt at a degree of saturation T=-5 deg.C are brought into contact by liquid phase epitaxy at 800 deg.C so as to melt the other portions dow by 3mum than under the mask 20. The etched mask has a side angle 60 deg.C irrespective of surface orientation. Two kinds of Ga melts at a degree of super saturation ALPHAT=5 deg.C are applied for recrystallization of a p-type buried AlGaAs layer 16 and a n-type AlGaAs layer 17. When the proportion of aluminum in the mixed crystal is 0.3, the interfaces with the buried layers are at the same level as the active layer under the conditions of the growth time of 22 seconds and 4 minutes for layers 16 and 17, respectively.
其他摘要	目的：提供一种高效率的半导体激光器，同时通过一种方法提高生产效率和器件可靠性，其中半导体GaAs在晶片上形成条纹并且晶片经受两步液相外延。组成：用HCl和H2O2蚀刻掩模层，形成一个掩模20。盖层15暴露在已去除掩模层的地方。通过在800℃下的液相外延使盖层和饱和度为T = -5℃的Ga麦芽接触，以使其它部分熔化3μm，比掩模20下面熔化。无论表面取向如何，都具有60°C的侧角。在超饱和度ALPHAT = 5℃下的两种Ga熔化用于p型掩埋AlGaAs层16和n型AlGaAs层17的再结晶。当混合晶体中铝的比例为0.3时在层16和17的生长时间分别为22秒和4分钟的条件下，与埋层的界面处于与有源层相同的水平。
申请日期	1989-10-11
专利号	JP1991125489A
专利状态	失效
申请号	JP1989262969
公开（公告）号	JP1991125489A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/88106
专题	半导体激光器专利数据库
作者单位	CANON INC
推荐引用方式 GB/T 7714	ONOUCHI TOSHIHIKO,NOJIRI HIDEAKI. Manufacture of semiconductor laser. JP1991125489A[P]. 1991-05-28.

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