Wavelength tunable semiconductor laser

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	Wavelength tunable semiconductor laser
其他题名	Wavelength tunable semiconductor laser
	ISHIKAWA HIROSHI
	1989-08-25
专利权人	FUJITSU LTD
公开日期	1989-08-25
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To enable the very period of a diffraction grating to change optionally through an external control by a method wherein a coherent monochromic light is made incident on both the ends of an active layer to generate a standing wave so as to make the active layer function as a diffraction grating. CONSTITUTION:This element of a semiconductor laser is composed of a p-InP layer 2 of a clad layer, an InGaAsP layer 3 of an active layer, and an n-InP layer 4 of a clad layer all formed on a p-InP substrate External light rays, incident on both the ends of the active layer 3 of a high refractive index through the n-type clad layer 4, travel through the active layer as an optical waveguide in directions opposite to each other, so that a standing wave is generated. Therefore, the energy applied to the active layer 3 is made to grow periodic and a carrier density inside the active layer 3 varies in the same period, and consequently the active layer 3 serves as a diffraction grating toward oscillating laser rays of a semiconductor laser. By these processes, the wavelength of oscillating laser rays can be controlled by varying that of external laser rays.
其他摘要	目的：通过一种方法，使衍射光栅的周期可选地通过外部控制改变，其中使相干单色光入射到有源层的两端以产生驻波，从而使有源层起作用作为衍射光栅。组成：半导体激光器的这个元件由包层的p-InP层2，有源层的InGaAsP层3和包层的n-InP层4组成，它们全部形成在p-InP衬底上通过n型覆盖层4入射到高折射率的有源层3的两端的外部光线在彼此相反的方向上作为光波导穿过有源层，从而具有突出性。波生成。因此，使施加到有源层3的能量周期性地生长并且有源层3内的载流子密度在相同的周期内变化，因此有源层3用作朝向半导体激光器的振荡激光束的衍射光栅。通过这些过程，可以通过改变外部激光射线的波长来控制振荡激光射线的波长。
申请日期	1988-02-19
专利号	JP1989212487A
专利状态	失效
申请号	JP1988038008
公开（公告）号	JP1989212487A
IPC 分类号	H01S5/00 \| H01S3/1055 \| H01S5/06 \| H01S5/062 \| H01S5/12 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/88094
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	ISHIKAWA HIROSHI. Wavelength tunable semiconductor laser. JP1989212487A[P]. 1989-08-25.

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