Manufacture of resonator for semiconductor laser

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	Manufacture of resonator for semiconductor laser
其他题名	Manufacture of resonator for semiconductor laser
	UCHIDA MAMORU
	1989-02-10
专利权人	日本電気株式会社
公开日期	1989-02-10
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To cleanly hold the end surfaces of etched mirrors and to prevent a crystal defect from propagating by a method wherein, after a semiconductor laser crystal comprising an active layer is etched in a high vacuum to form the etched mirrors, a compound semiconductor crystal having a forbidden band width larger than that of the above active layer is epitaxially grown thereon while the high vacuum is held. CONSTITUTION:Resists 106 are provided on a laser crystal consisting of a multilayer AlGaAs layer laminated on an N-type GaAs substrate 10 Then, etched mirrors 109 are formed by an RIBE using the resists 106 as etching masks. The resist masks are removed by an RIBE using oxygen while a high vacuum is successively held. Moreover, oxygen and chlorine, which are adsorbed on the etching surface, are removed with a hydrogen radical excited by an ECR at 50 W. Moreover, compound semiconductor layers, such as undoped Al0.5Ga0.5As window layers 108, having a forbidden band width larger than that of an active layer 103 and having a resistance higher than that of the active layer 103 are epitaxially grown on the end surfaces of the etched mirrors by a molecular beam epitaxial method while the vacuum is held.
其他摘要	用途：通过一种方法清洁地保持蚀刻镜的端面并防止晶体缺陷传播，其中，在高真空中蚀刻包括有源层的半导体激光晶体以形成蚀刻镜之后，具有化合物半导体晶体在保持高真空的同时，在其上外延生长大于上述有源层的禁带宽度。组成：抗蚀剂106设置在由层叠在N型GaAs基板101上的多层AlGaAs层组成的激光晶体上。然后，使用抗蚀剂106作为蚀刻掩模，通过RIBE形成蚀刻镜109。使用氧气通过RIBE除去抗蚀剂掩模，同时连续保持高真空。此外，吸附在蚀刻表面上的氧和氯被用ECR在50W激发的氢自由基除去。此外，化合物半导体层，例如具有禁带的未掺杂Al0.5Ga0.5As窗口层108在保持真空的同时，通过分子束外延法在蚀刻镜的端面上外延生长宽度大于有源层103的电阻并且具有高于有源层103的电阻的电阻。
申请日期	1987-08-06
专利号	JP1989039789A
专利状态	失效
申请号	JP1987195380
公开（公告）号	JP1989039789A
IPC 分类号	H01S3/08 \| H01S3/06 \| H01S5/00 \| H01S5/028 \| H01S5/10 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/88069
专题	半导体激光器专利数据库
作者单位	日本電気株式会社
推荐引用方式 GB/T 7714	UCHIDA MAMORU. Manufacture of resonator for semiconductor laser. JP1989039789A[P]. 1989-02-10.

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