Xi'an Institute of Optics and Precision Mechanics,CAS
Distribution feedback semiconductor laser device | |
其他题名 | Distribution feedback semiconductor laser device |
SUGAWARA SATOSHI; TAKIGUCHI HARUHISA; NAKANISHI CHITOSE; KUDO HIROAKI | |
1991-12-18 | |
专利权人 | SHARP CORP |
公开日期 | 1991-12-18 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To acquire a distribution feedback semiconductor laser device of good element characteristics at high yield by providing an optical guide layer which consists of a stripe-like growth layer whose cross sectional contour is triangular in a number of stripe-like grooves parallel on a substrate and by forming a diffraction grating on a slant of the guide layer by etching. CONSTITUTION:An SiO2 film is deposited on a substrate 1, a stripe-like groove is formed, and an SiO2 mask 12 is formed. Then, an Se doped n-GaAs buffer layer 2, an Se doped n-Al0.5Ga0.5As clad layer 3, a nondoped Al0.13Ga0.08As active layer 4 and a Zn doped p-Al0.5Ga0.5As clad layer 5 are formed successively on the inside of the groove by MOCVD method. After a diffraction grating pattern is formed by electron beam exposure on the second resist layer 14 formed on the tripe-like growth layer, a first resist layer 13 is etched by oxygen plasma etching and a diffraction grating pattern is formed on a slant of an optical guide layer 6. Thereafter, a diffraction grating is formed on the optical guide layer 6 by ion beam etching. |
其他摘要 | 目的:通过提供一个光学导向层,以高产率获得具有良好元件特性的分布反馈半导体激光器件,该光导层由条纹状生长层组成,其横截面轮廓为三角形,平行于基板上的多个条状凹槽并且通过蚀刻在引导层的斜面上形成衍射光栅。组成:在基板1上沉积SiO2薄膜,形成条状凹槽,并形成SiO2掩模12。然后,Se掺杂的n-GaAs缓冲层2,Se掺杂的n-Al0.5Ga0.5As包层3,非掺杂的Al0.13Ga0.08As有源层4和Zn掺杂的p-Al0.5Ga0.5As包层5通过MOCVD方法在沟槽内部连续形成。在通过电子束曝光在形成在三字形生长层上的第二抗蚀剂层14上形成衍射光栅图案之后,通过氧等离子体蚀刻蚀刻第一抗蚀剂层13,并且在光学的斜面上形成衍射光栅图案。之后,通过离子束蚀刻在光导层6上形成衍射光栅。 |
申请日期 | 1990-04-04 |
专利号 | JP1991288489A |
专利状态 | 失效 |
申请号 | JP1990089634 |
公开(公告)号 | JP1991288489A |
IPC 分类号 | H01S5/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/87889 |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP CORP |
推荐引用方式 GB/T 7714 | SUGAWARA SATOSHI,TAKIGUCHI HARUHISA,NAKANISHI CHITOSE,et al. Distribution feedback semiconductor laser device. JP1991288489A[P]. 1991-12-18. |
条目包含的文件 | ||||||
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JP1991288489A.PDF(131KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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