Surface emission semiconductor laser element

OPT OpenIR > 半导体激光器专利数据库

	Surface emission semiconductor laser element
其他题名	Surface emission semiconductor laser element
	KONDO MASAFUMI; HAYAKAWA TOSHIRO; SUYAMA NAOHIRO; TAKAHASHI HISATOSHI
	1989-04-26
专利权人	SHARP CORP
公开日期	1989-04-26
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain high gain properties by composing a surface emission semiconductor laser element of a GaAs semiconductor substrate having a face azimuth 111 and an active layer having superlattice or quantum well structure formed onto a substrate and consisting of GaAs and AlGaAs. CONSTITUTION:A P-type GaAs buffer layer 2, a P-type Al0.7Ga0.3As clad layer 3, a multiple quantum well active layer 4 in which undoped GaAs quantum well layers and undoped Al0.2Ga0.8As barrier layers are superposed alternately in 200 layers and 199 layers, an N-type Al0.7 Ca0.3As clad layer 5 and an N-type GaAs contact layer 6 are grown continuously on a P-type GaAs substrate 1 having a face orientation 111 by using an MBE method. An SiN film 7 is shaped onto the contact layer 6, and an Zn diffusion layer 8 is formed up to the clad layer 3. The central section of the GaAs substrate is etched until the clad layer 3 is exposed, and a resonator is formed, reflecting mirrors 9, 10 functioning as electrodes in combination are shaped, and the whole is divided into chips. Positive voltage is applied to the electrode 10 for the chip and negative voltage to the electrode 9, and laser beams are extracted from the electrode 10 side. Accordingly, room-temperature continuous oscillation is enabled by low threshold currents.
其他摘要	目的：通过组成具有面方位角111的GaAs半导体衬底的表面发射半导体激光器元件和具有形成在衬底上并由GaAs和AlGaAs组成的超晶格或量子阱结构的有源层来获得高增益特性。组成：P型GaAs缓冲层2，P型Al0.7Ga0.3As包层3，多量子阱有源层4，其中未掺杂的GaAs量子阱层和未掺杂的Al0.2Ga0.8As阻挡层交替叠加在200层和199层中，通过使用MBE方法在具有面取向111的P型GaAs衬底1上连续生长N型Al0.7 Ca0.3As包层5和N型GaAs接触层6 。在接触层6上成形SiN膜7，并形成Zn扩散层8直到包层3.蚀刻GaAs衬底的中心部分直到覆盖层3暴露，并形成谐振器，将作为电极组合起来的反射镜9,10成形，并将整体分成芯片。对芯片的电极10施加正电压，向电极9施加负电压，从电极10侧提取激光束。因此，通过低阈值电流实现室温连续振荡。
申请日期	1987-10-21
专利号	JP1989108789A
专利状态	失效
申请号	JP1987267150
公开（公告）号	JP1989108789A
IPC 分类号	H01S5/00 \| H01S5/026 \| H01S5/183 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/87792
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	KONDO MASAFUMI,HAYAKAWA TOSHIRO,SUYAMA NAOHIRO,et al. Surface emission semiconductor laser element. JP1989108789A[P]. 1989-04-26.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
JP1989108789A.PDF（193KB）	专利		开放获取	CC BY-NC-SA	请求全文