Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor light emitting element | |
其他题名 | Semiconductor light emitting element |
ONAKA SEIJI; SASAI YOICHI; TSUJII HIRAAKI; TERASHIGE TAKASHI | |
1988-04-07 | |
专利权人 | MATSUSHITA ELECTRIC IND CO LTD |
公开日期 | 1988-04-07 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To reduce a leakage current thereby to improve the yield of manufacturing a semiconductor light emitting element by covering the exposed active layer with a diffused layer. CONSTITUTION:A stripelike InGaAsP active layer 3 is provided on one conductivity type, n-type, InP first clad layer 2, and the other conductivity type, p-type, InP second clad layer 4 is provided thereon. The other conductivity type Zn- diffused layer 7 is formed on the exposed surface of the layer 3. The layer 7 diffused in the layer 2 serves as a current blocking layer for a current constriction layer. However, even if electrons are injected is this region, electrons are enclosed in the region in which Zn is diffused of the layer 3 having narrow band gap thereon. That is, since the electrons injected to the current blocking layer does not become leaked component but enclosed in the active layer, the reactive current component is eliminated. |
其他摘要 | 用途:为了减少漏电流,从而通过用扩散层覆盖暴露的有源层来提高制造半导体发光元件的产量。组成:在一种导电类型,n型,InP第一包层2上提供条状InGaAsP有源层3,并在其上提供另一种导电类型,p型,InP第二包层4。在层3的暴露表面上形成另一导电类型Zn扩散层7.在层2中扩散的层7用作电流限制层的电流阻挡层。然而,即使注入电子是该区域,电子也被包围在Zn在其上具有窄带隙的层3扩散的区域中。也就是说,由于注入电流阻挡层的电子不会成为泄漏成分而是封闭在有源层中,所以消除了无功电流成分。 |
申请日期 | 1986-09-19 |
专利号 | JP1988077187A |
专利状态 | 失效 |
申请号 | JP1986223045 |
公开(公告)号 | JP1988077187A |
IPC 分类号 | H01L33/14 | H01L33/24 | H01L33/30 | H01L33/36 | H01S5/00 | H01L33/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/87699 |
专题 | 半导体激光器专利数据库 |
作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
推荐引用方式 GB/T 7714 | ONAKA SEIJI,SASAI YOICHI,TSUJII HIRAAKI,et al. Semiconductor light emitting element. JP1988077187A[P]. 1988-04-07. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1988077187A.PDF(263KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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