Semiconductor laser element

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	Semiconductor laser element
其他题名	Semiconductor laser element
	ENDO KENJI
	1987-03-12
专利权人	NEC CORP
公开日期	1987-03-12
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a semiconductor laser element free from a return light noise, by seperating electrically an absorption region and an active region arranged in the longitudinal direction of a resonator with a separating region formed by inverting a conduction type applying an impurity diffusion method. CONSTITUTION:In the longitudinal direction of a resonator, an absorption region and an active region are arranged, which are optically continuous through an active layer waveguide but electrically seperated with a separating region 5 formed by inverting a conduction type. For example, a P-type AlzGa1-zAs clad layer 2, an AlxGa1-xAs active layer 3, an N-type AlyGa1-yAs clad layer 4 and tandem type electrodes 6 an 7 are formed on a P-type GaAs substrate penetrating the active layer from the surface of the P-type clad layer 4, an impurity is selectively diffused and the conduction type is inverted to form the separating region 5, with which the active region and the absorption region are electrically separated. An electrode 7 of the absorption region is electrically short-circuited with a P-side common electrode 9 and a lead wire. On the surface of the clad layer 4, an insulating film 8 is partially formed to constrict the current in the transversal direction.
其他摘要	目的：为了获得一种没有返回光噪声的半导体激光器元件，通过利用通过应用杂质扩散方法反转导电类型形成的分离区域电隔离在谐振器的纵向方向上布置的吸收区域和有源区域。组成：在谐振器的纵向，布置吸收区域和有源区域，它们通过有源层波导光学连续，但与通过反转导电类型形成的分离区域5电隔离。例如，在P型GaAs衬底1上形成P型AlzGa1-zAs包层2，AlxGa1-xAs有源层3，N型AlyGa1-yAs包层4和串联型电极6a7。从P型覆层4的表面穿透有源层，杂质被选择性地扩散并且导电类型被反转以形成分离区域5，有源区域和吸收区域通过分离区域5电分离。吸收区域的电极7与P侧公共电极9和引线电短路。在包层4的表面上，部分地形成绝缘膜8以限制横向上的电流。
申请日期	1985-09-06
专利号	JP1987057272A
专利状态	失效
申请号	JP1985197910
公开（公告）号	JP1987057272A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/87634
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	ENDO KENJI. Semiconductor laser element. JP1987057272A[P]. 1987-03-12.

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