Semiconductor laser

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	Semiconductor laser
其他题名	Semiconductor laser
	ISHIGURO NAGATAKA
	1989-01-27
专利权人	MATSUSHITA ELECTRIC IND CO LTD
公开日期	1989-01-27
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To improve reliability by forming filling layers consisting of two or more p-type and n-type layers which surround laterally a mesa-type stripe-shaped double heterojunction, and using as the first layer thereof a semiconductor layer having an electrical conductivity similar to that of a substrate used at the time of forming the double heterojunction. CONSTITUTION:After growing an N-type InP-clad layer 22, an activated InGaAsP layer 1, and a P-type InP clad layer 3 on an N-type InP substrate 12 by the liquid phase epitaxial growth method, a stripe profile which is parallel to the direction is formed by an SiO2 mask so that the width of an activated layer is approximately 2mum. Through the second liquid phase epitaxial growth process a BH laser structure is formed by growing an N-type InP layer 6, a P-type InP layer 4, and an N-type InP layer 5 in this sequence, and filling an activated layer. Accordingly, at the time of filling and growing, an interface is formed on an area exposed, before the growth, to an ambient gas by an electrical conductive layer similar thereto. As a result, a p-n junction is formed distant from this position, thereby preventing the deterioration of quality. According to the constitution, the generation of a leak current at the filling layers, which is a major cause of the deterioration of BH laser characteristics, can be checked.
其他摘要	用途：通过形成由两个或多个p型和n型层组成的填充层来提高可靠性，所述p型和n型层横向围绕台面型条形双异质结，并且使用具有类似导电性的半导体层作为其第一层在形成双异质结时使用的衬底的衬底。组成：通过液相外延生长方法在N型InP衬底12上生长N型InP包层22，活化的InGaAsP层1和P型InP包层3之后，形成条纹轮廓。通过SiO 2掩模形成与方向平行的方向，使得活化层的宽度约为2μm。通过第二液相外延生长工艺，通过以此顺序生长N型InP层6，P型InP层4和N型InP层5，并填充活化层，形成BH激光器结构。因此，在填充和生长时，在生长之前暴露于通过与其类似的导电层暴露于环境气体的区域上形成界面。结果，形成远离该位置的p-n结，从而防止质量劣化。根据该结构，可以检查在填充层处产生漏电流，这是BH激光器特性恶化的主要原因。
申请日期	1987-07-22
专利号	JP1989025592A
专利状态	失效
申请号	JP1987182537
公开（公告）号	JP1989025592A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/87524
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	ISHIGURO NAGATAKA. Semiconductor laser. JP1989025592A[P]. 1989-01-27.

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