Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	ISSHIKI, KUNIHIKO
	1991-05-28
专利权人	MITSUBISHI DENKI KABUSHIKI KAISHIKI KAISHA
公开日期	1991-05-28
授权国家	美国
专利类型	授权发明
摘要	A multi-quantum well laser having a self-aligned structure which limits catastophic optical damage by producing window regions near the facets without significantly decreasing the efficiency of the laser. The semiconductor laser includes at least a first conductivity type lower cladding layer, an active layer including a multi-quantum well structure, a second conductivity type first upper cladding layer, a first conductivity type current blocking layer, and a second conductivity type second upper cladding layer successively disposed on a first conductivity type semiconductor substrate. The current blocking layer has a central elongate stripe shaped current confinement groove extending between the laser facets which stabilizes the transverse mode and confines current to a channel-like region in the active layer. First conductivity type dopant impurities form disordering regions located adjacent the facets which invade and disorder the multi-quantum well active layer to create disordered active layer regions. Second conductivity type dopant impurities form separating regions located adjacent the faects which separate the current blocking layer and the disordering regions to prevent current leakage between the current blocking layer and the disordering regions.
其他摘要	一种具有自对准结构的多量子阱激光器，其通过在小平面附近产生窗口区域而不显着降低激光器的效率来限制灾难性光学损坏。半导体激光器至少包括第一导电型下包层，包括多量子阱结构的有源层，第二导电型第一上包层，第一导电型电流阻挡层和第二导电型第二上包层连续地设置在第一导电类型半导体衬底上的层。电流阻挡层具有在激光刻面之间延伸的中央细长条形电流限制槽，其稳定横向模式并将电流限制在有源层中的沟道状区域。第一导电类型掺杂剂杂质形成位于小平面附近的无序区域，其侵入并扰乱多量子阱有源层以产生无序的有源层区域。第二导电类型掺杂剂杂质形成位于相邻区域的分离区域，其将电流阻挡层和无序区域分开以防止电流阻挡层和无序区域之间的电流泄漏。
申请日期	1989-11-06
专利号	US5020068
专利状态	失效
申请号	US07/432215
公开（公告）号	US5020068
IPC 分类号	H01S5/34 \| H01S5/16 \| H01S5/00 \| H01S5/223 \| H01S5/042 \| H01S3/19
专利代理人	-
代理机构	LEYDIG,VOIT & MAYER
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/87505
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHIKI KAISHA
推荐引用方式 GB/T 7714	ISSHIKI, KUNIHIKO. Semiconductor laser device. US5020068[P]. 1991-05-28.

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