Manufacture of semiconductor laser device

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	Manufacture of semiconductor laser device
其他题名	Manufacture of semiconductor laser device
	MIHASHI YUTAKA; KUMABE HISAO; SOGOU TOSHIO; TAKAMIYA SABUROU
	1982-11-12
专利权人	MITSUBISHI DENKI KK
公开日期	1982-11-12
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To allow the mass production of a laser diode in good characteristic of transverse directional type with good reproducibility and yield, by forming a specific groove on the semiconductor substrate surface for the impurity diffusion from the exposure surface thereof to form an active layer. CONSTITUTION:An N type AlGaAs clad layer 2, N type AlGaAs active layer 3, N type AlGaAs clad layer 4 and N type GaAs contact layer 5 are successively grown on the main surface of a semi-insulating GaAs substrate 1 to heap an Si3N4 film 12 next to open an opening part 14 to a stripe. Next, a V-shaped groove 15 with a depth reaching e.g. substrate 1 is formed by etching. Subsequently, after the removal of the Si3N4 film 12 on a p electrode 9 side layer 5, Zn is diffused to form a p region 6 further to form a p region 7 by a drive process. Thereafter, the left Si3N4 film 12 is removed and p region diffused on the layer 5 is removed by etching later to form p electrode 9 and n electrode 10.
其他摘要	目的：通过在半导体衬底表面上形成特定的凹槽，使杂质从其暴露表面扩散，形成有源层，从而使大规模生产具有良好再现性和良率的横向定向型的激光二极管。组成：在半绝缘GaAs衬底1的主表面上依次生长N型AlGaAs包层2，N型AlGaAs有源层3，N型AlGaAs包层4和N型GaAs接触层5，以堆积Si3N4薄膜接着打开开口部分14到条纹12。接下来，V形凹槽15的深度达到例如通过蚀刻形成衬底1。随后，在p电极9侧层5上去除Si3N4膜12之后，通过驱动工艺扩散Zn以进一步形成p +区域6以形成p区域7。之后，去除左Si3N4膜12，并且通过稍后蚀刻去除在层5上扩散的p区域，以形成p电极9和n电极10。
申请日期	1981-05-08
专利号	JP1982184275A
专利状态	失效
申请号	JP1981069606
公开（公告）号	JP1982184275A
IPC 分类号	H01S5/00 \| H01S5/20 \| H01S5/22 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/87500
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KK
推荐引用方式 GB/T 7714	MIHASHI YUTAKA,KUMABE HISAO,SOGOU TOSHIO,et al. Manufacture of semiconductor laser device. JP1982184275A[P]. 1982-11-12.

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