Semiconductor light-emitting and manufacture thereof

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor light-emitting and manufacture thereof
其他题名	Semiconductor light-emitting and manufacture thereof
	HOSHINA JUNICHI; OGURA MOTOTSUGU; ONAKA SEIJI
	1990-12-10
专利权人	MATSUSHITA ELECTRIC IND CO LTD
公开日期	1990-12-10
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To decrease heat generation in a clad layer for improving a characteristic by forming a structure having a P-type conductive region on one side and an n-type conductive region on the other side putting a projected stripe between in a double heterojunction structure consisting of a semiconductor substrate and a first clad layer, an active layer, a second clad layer of projected striped structure. CONSTITUTION:Epitaxial growth of an undoped Al GaInP clad layer 2, a GaInP active layer 3 and an undoped Al GaInP clad layer 4 is performed in order on an S. I. GaAs substrate. Next, the Al GaInP layer 4 is selectively etched, having an SiO2 9 as a mask to leave a layer 4 in the shape of a projected stripe. Further, undoped GaAs layers 5, 6 are made to epitaxially grow excepting a region containing the SiO2 9 mask by selective growth having SiO2 9 as a mask. Next, doping is performed in order to form P, n regions on the undoped GaAs layers 5 and 6 respectively. In this way, the P-type region 7 and n-type region 8 are formed. Lastly, a P-type electrode 9 is formed on a P-GaAs layer 5 while an n-type electrode 10 is formed on an n-GaAs layer 6 for being finished.
其他摘要	目的：通过在一侧形成具有P型导电区域而在另一侧具有n型导电区域的结构来减少包层中的发热以改善特性，在双侧异质结结构中形成投影条纹半导体衬底和第一覆层，有源层，投射条纹结构的第二覆层的一部分。组成：在S.I GaAs衬底上依次进行未掺杂的Al GaInP包层2，GaInP有源层3和未掺杂的Al GaInP包层4的外延生长。接下来，选择性地蚀刻AlGaInP层4，其具有SiO 2 9作为掩模，以留下突出条纹形状的层4。此外，通过选择性生长SiO 2 9作为掩模，使未掺杂的GaAs层5,6除了包含SiO 2 9掩模的区域外延生长。接下来，进行掺杂以分别在未掺杂的GaAs层5和6上形成P，n区域。以这种方式，形成P型区域7和n型区域8。最后，在P-GaAs层5上形成P型电极9，同时在n-GaAs层6上形成n型电极10以进行精加工。
申请日期	1989-05-12
专利号	JP1990298090A
专利状态	失效
申请号	JP1989118985
公开（公告）号	JP1990298090A
IPC 分类号	H01S5/00 \| H01S5/042 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/87479
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	HOSHINA JUNICHI,OGURA MOTOTSUGU,ONAKA SEIJI. Semiconductor light-emitting and manufacture thereof. JP1990298090A[P]. 1990-12-10.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
JP1990298090A.PDF（171KB）	专利		开放获取	CC BY-NC-SA	请求全文