Liquid-phase epitaxial growth method

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	Liquid-phase epitaxial growth method
其他题名	Liquid-phase epitaxial growth method
	YAMAZAKI SUSUMU
	1986-09-03
专利权人	FUJITSU LTD
公开日期	1986-09-03
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain an AlInAs thick-film lattice-aligning with an InP substrate by a solution having a composition fitted for a growth-start temperature by using an Al-In-As three-element solution and lowering the start temperature in succession. CONSTITUTION:InP having a (111) A face from which In atoms are exposed is used, and XAl 5.24X10TG-3.28X10 and XAs 7.81X10TG-0.45 are each selected in several growth-start temperature TG and a liquid-layer composition X of Al and As lattice-aligning with InP. A first layer is grown at TG=790 deg.C and temperature-drop width DELTAT=10 deg.C first, a second layer is grown at TG=780 deg.C and DELTAT=10 deg.C, and the thickness of several growth layer is limited in an extent that mirror surfaces are acquired. According to the constitution, a thick-film in 1mum or more consisting of AlInAs lattice-aligning with InP can be shaped through continuous multilayer growth, thus resulting in an advantageous state to the formation of an avalanche photodiode.
其他摘要	目的：通过使用Al-In-As三元素溶液并具有适合于生长起始温度的组成的溶液并连续降低起始温度来获得与InP衬底对准的AlInAs厚膜晶格。构成：使用具有In原子暴露的（111）A面的InP，并且X 1 Al 5.24×10 -6 TG-3.28×10 -3和X 1 As 7.81×10 -4在几个生长起始温度TG和Al和As的液层组成X 1中分别选择TG-0.45与InP晶格取向。首先在TG = 790℃和温度下降宽度DELTAT = 10℃下生长第一层，在TG = 780℃和DELTAT = 10℃下生长第二层，厚度为几个生长层在获得镜面的程度上受到限制。根据该结构，通过连续的多层生长可以使由AlInAs与InP晶格取向组成的1um或更大的厚膜形成，由此导致形成雪崩光电二极管的有利状态。
申请日期	1985-02-28
专利号	JP1986198718A
专利状态	失效
申请号	JP1985039121
公开（公告）号	JP1986198718A
IPC 分类号	H01L31/107 \| H01L21/208 \| H01S5/00 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/87339
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	YAMAZAKI SUSUMU. Liquid-phase epitaxial growth method. JP1986198718A[P]. 1986-09-03.

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