Semiconductor laser array

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	Semiconductor laser array
其他题名	Semiconductor laser array
	ITO KUNIO; SHIMIZU YUICHI; HAMADA TAKESHI; KUME MASAHIRO
	1987-11-19
专利权人	MATSUSHITA ELECTRIC IND CO LTD
公开日期	1987-11-19
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To reduce optical density at an end surface part, to suppress the deterioration at the end surface of a laser device and to obtain the laser device characterized by high output power and a long life, by making the thickness of an active layers at the end surface parts of both resonators of a laser crystal thinner than the inside of the crystal. CONSTITUTION:On a P-type GaAs substrate 1, a mesa 9 is formed by etching. Then the mesa is buried by a liquid phase epitaxy method, and the first growing is performed so as to flatten the surface. A ridge 11 and three grooves 10 are formed by etching. At this time, the width of the ridge 11 is made narrow in the vicinity of the end surface. The second phase epitaxy is performed on the substrate, and a multilayer structure is grown. At this time, the narrower the width of the ridge, the slower the growing speed on the ridge. Therefore an active layer becomes thin at the end surface part where the width of the ridge 11 is narrow in comparison with the inside of the crystal. When the active layer is thin, confinement of light becomes poor, and the diameter of the laser light beam becomes large in the vicinity of the end surface. Therefore the optical density can be decreased. As a result, the device can withstand up to high output power.
其他摘要	目的：通过使有源层的厚度达到最大值来降低端面部分的光密度，抑制激光器件端面的劣化，并获得具有高输出功率和长寿命的激光器件。激光晶体的两个谐振器的端面部分比晶体内部薄。组成：在P型GaAs衬底1上，通过蚀刻形成台面9。然后通过液相外延方法掩埋台面，并且进行第一次生长以使表面变平。通过蚀刻形成脊11和三个凹槽10。此时，脊11的宽度在端面附近变窄。在衬底上进行第二相外延，并生长多层结构。此时，脊的宽度越窄，脊上的生长速度越慢。因此，与晶体内部相比，脊11的宽度窄的端面部分处的有源层变薄。当有源层很薄时，光的限制变差，并且激光光束的直径在端面附近变大。因此，可以降低光密度。结果，该装置可以承受高达输出功率。
申请日期	1986-05-15
专利号	JP1987266888A
专利状态	失效
申请号	JP1986111002
公开（公告）号	JP1987266888A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/87305
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	ITO KUNIO,SHIMIZU YUICHI,HAMADA TAKESHI,et al. Semiconductor laser array. JP1987266888A[P]. 1987-11-19.

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