Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure

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	Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
其他题名	Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
	KNEISSL, MICHAEL A.
	2006-06-15
专利权人	PALO ALTO RESEARCH CENTER INCORPORATED
公开日期	2006-06-15
授权国家	美国
专利类型	发明申请
摘要	A novel indium gallium nitride laser diode is described. The laser uses indium in either the waveguide layers and/or the cladding layers. It has been found that InGaN waveguide or cladding layers enhance optical confinement with very small losses. Furthermore, the use of InGaN waveguide or cladding layers can improve the structural integrity of active region epilayers because of reduced lattice mismatch between waveguide layers and the active region.
其他摘要	描述了一种新颖的氮化铟镓激光二极管。激光在波导层和/或包层中使用铟。已经发现InGaN波导或包层以非常小的损耗增强光学限制。此外，由于减小了波导层和有源区之间的晶格失配，使用InGaN波导或包层可以改善有源区外延层的结构完整性。
申请日期	2005-10-28
专利号	US20060126688A1
专利状态	授权
申请号	US11/262272
公开（公告）号	US20060126688A1
IPC 分类号	H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/87251
专题	半导体激光器专利数据库
作者单位	PALO ALTO RESEARCH CENTER INCORPORATED
推荐引用方式 GB/T 7714	KNEISSL, MICHAEL A.. Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure. US20060126688A1[P]. 2006-06-15.