Semiconductor laser

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	Semiconductor laser
其他题名	Semiconductor laser
	UENO SHINSUKE; ASATA SUSUMU
	1988-08-04
专利权人	NEC CORP
公开日期	1988-08-04
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a semiconductor laser which exhibits an excellent property of reproducibility and reliability at a low threshold and with the high efficiency as well by causing a change of a band gap in a heterojunction part at least among heterojunction that are formed between respective layers to vary in the form of the inclination. CONSTITUTION:A double-heterojunction structure is composed of an active layer 13 having thickness that is less than several times of wavelength in a tube as well as the first and second guide layers 12 and 14 having band gaps that are wider than that of the active layer and having the quality where its refractive index is small and then block layers 15 where their band gaps are narrow and they have different polarity are prepared at both sides of a stripe-like carrier injection region 17 and further a laminated layer structure is formed so that it is converted by the third guide layer 18. Being interposed between the above laminated layer and the first and second clad layer 11 and 19, the band gaps of which are wider than those of respective guide layers and the refractive indexes of which are small, the first clad layer 11 is formed on a semiconductor substrate 10 at the semiconductor substrate side. A change of the band gap at a heterojunction part at least among the respective heterojunctions formed between respective layers is allowed to vary in the form of the inclination.
其他摘要	目的：获得一种半导体激光器，该半导体激光器在低阈值和高效率下表现出优异的再现性和可靠性，并且至少在各层之间形成的异质结中引起异质结部分中的带隙变化。倾向的形式各不相同。组成：双异质结结构由有效层13和第一和第二引导层12和14组成，有源层13的厚度小于管中波长的几倍，第一和第二引导层12和14的带隙宽于有源层的带隙在条状载流子注入区域17的两侧制备层，并且具有其折射率小的质量，然后阻挡其带隙窄并且它们具有不同极性的层15，并且进一步形成层叠层结构它被第三导向层18转换。插入在上述叠层和第一和第二包层11和19之间，其带隙宽于各引导层的带隙，并且其折射率小在第一包层11上，在半导体衬底侧的半导体衬底10上形成第一包层11。至少在各层之间形成的各异质结中的异质结部分处的带隙的变化允许以倾斜的形式变化。
申请日期	1987-01-30
专利号	JP1988188986A
专利状态	失效
申请号	JP1987020926
公开（公告）号	JP1988188986A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/87165
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	UENO SHINSUKE,ASATA SUSUMU. Semiconductor laser. JP1988188986A[P]. 1988-08-04.

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