Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser | |
其他题名 | Semiconductor laser |
KOTAKI YUJI | |
1988-01-05 | |
专利权人 | FUJITSU LTD |
公开日期 | 1988-01-05 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To inhibit field intensity difference in a resonator and index difference even under the state in which oscillation is grown, to ensure mode selectivity and to obtain an optical output having a stable single wavelength by forming a plurality of and an odd number of phase shifts corresponding to phase difference of 1/2pi to light waves having a Bragg wavelength to the corrugations. CONSTITUTION:With corrugations 4, photo-resists such as a positive resist and a negative resist are applied alternately on the upper surface of an N-type InP clad layer 3 in a striped manner prior to the epitaxial growth of an N-type InGaAsP guide layer 5, and exposed through a two-beam interference method by helium-cadmium (He-Cd) laser beams and a mask is shaped, and phase shifts of 1/2LAMBDA are each formed at the center (1/2L) and positions (S, L-S) at a distance S from respective end surface at a period LAMBDA 200nm corresponding to the order m= Where cavity length L=300nm, S=100nm and a coupling coefficient kappa=60cm are determined, and kappaL=8 is decided. Accordingly, even when kappaL of a distributed feedback type laser is large, the mode selectivity of the laser is also ensured after oscillation growth, thus stably acquiring single wavelength beams having a large output. |
其他摘要 | 目的:即使在振荡生长的状态下,也能抑制谐振器中的场强差异和折射率差,以确保模式选择性,并通过形成多个和奇数个相移来获得具有稳定单波长的光输出对应于具有布拉格波长的波纹的1 / 2pi的相位差。组成:对于波纹4,在外延生长N型InGaAsP指南之前,在N型InP包层3的上表面上以条纹方式交替施加诸如正性抗蚀剂和负性抗蚀剂的光致抗蚀剂第5层,通过双光束干涉法暴露出氦镉(He-Cd)激光束和掩模成形,并且1 / 2LAMBDA的相移分别形成在中心(1 / 2L)和位置( S,LS)在距离各个端面的距离S处,对应于阶数m = 1的周期LAMBDA 200nm。在腔长L = 300nm,S = 100nm并确定耦合系数kappa = 60cm-1的情况下,确定kappaL = 8。因此,即使当分布式反馈型激光器的kappaL很大时,在振荡生长之后也确保了激光器的模式选择性,从而稳定地获得具有大输出的单波长光束。 |
申请日期 | 1986-06-19 |
专利号 | JP1988000185A |
专利状态 | 失效 |
申请号 | JP1986143604 |
公开(公告)号 | JP1988000185A |
IPC 分类号 | H01S5/00 | H01S5/12 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/87139 |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJITSU LTD |
推荐引用方式 GB/T 7714 | KOTAKI YUJI. Semiconductor laser. JP1988000185A[P]. 1988-01-05. |
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