Semiconductor laser

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	Semiconductor laser
其他题名	Semiconductor laser
	MORIMOTO MASAHIRO
	1987-06-19
专利权人	FUJITSU LTD
公开日期	1987-06-19
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To reduce crystal defects and a reactive current by a method wherein, after a corrugation is formed on a substrate, an etching stopper layer is formed thereon and a structure like the VSB laser of a conventional Fabry-Perot resonator is formed on the etching stopper layer. CONSTITUTION:The surface of an N-type InP substrate 1 is etched with bromine-based etchant to form an InP corrugation 2 with a pitch of about 200nm. An InGaAsP layer 3 with a wavelength lambda 15mum and a thickness of about 0.1mum as an etching stopper layer and a P-type InP layer 4 with a thickness of about 1mum and an N-type InP layer 5 with a thickness of about 2mum as lateral light confinement layers are successively formed on the corrugation 2 by a liquid phase growth method (LEP). Further, a silicon dioxide layer is formed by a chemical vapor phase deposition method. By a lithography process using resist, a stripe window with a width of about 5mum is drilled in that silicon dioxide layer in parallel to the direction of . After the resist is removed, etching is carried out in hydrochloric to form a mesa groove 6 which has an etched surface 6A and the SiO2 layer is removed. An InGaAsP layer 7 as a waveguide layer, an InGaAsP layer 8 as an active layer, a P-type InP layer 9 as a light confinement layer and a P-type InGaAsP layer 10 as a contact layer are formed successively by LPE covering the mesa groove 6. A Ti/Pt/Au layer 11 as a P-type side electrode is formed on the contact layer 10 and an AuGe/Au layer 12 as an N-type side electrode is formed on the backside of the substrate.
其他摘要	用途：通过一种方法减少晶体缺陷和无功电流，其中在基板上形成波纹后，在其上形成蚀刻停止层，并在蚀刻上形成类似于传统法布里 - 珀罗谐振器的VSB激光器的结构塞子层。组成：用溴基蚀刻剂蚀刻N型InP衬底1的表面，形成间距约为200nm的InP波纹2。作为蚀刻停止层的波长λ15μm，厚度约0.1μm的InGaAsP层3和厚度约1μm的P型InP层4和厚度约2μm的N型InP层5因为通过液相生长方法（LEP）在波纹2上连续形成侧向光限制层。此外，硅通过化学气相沉积法形成二氧化物层。通过使用抗蚀剂的光刻工艺，在该二氧化硅层中平行于的方向钻出宽度约为5μm的条形窗口。在去除抗蚀剂之后，在盐酸中进行蚀刻以形成台面凹槽6，台面凹槽6具有蚀刻表面6A并且去除SiO2层。作为波导层的InGaAsP层7，作为有源层的InGaAsP层8，作为光限制层的P型InP层9和作为接触层的P型InGaAsP层10通过覆盖台面的LPE连续形成。在接触层10上形成作为P型侧电极的Ti / Pt / Au层11，并且在接触层10的背面上形成作为N型侧电极的AuGe / Au层12。基质。
申请日期	1985-12-11
专利号	JP1987136888A
专利状态	失效
申请号	JP1985278303
公开（公告）号	JP1987136888A
IPC 分类号	H01S5/00 \| H01S5/12 \| H01S5/223 \| H01S5/24 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/87079
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	MORIMOTO MASAHIRO. Semiconductor laser. JP1987136888A[P]. 1987-06-19.

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