Xi'an Institute of Optics and Precision Mechanics,CAS
Optical amplifier | |
其他题名 | Optical amplifier |
VERBEEK, BASTIAAN HENDRIK; VAN ES-SPIEKMAN, WILMA; HENDRIX, LEONARDUS JOANNES MARIA | |
1991-05-08 | |
专利权人 | PHILIPS ELECTRONICS N.V. |
公开日期 | 1991-05-08 |
授权国家 | 欧洲专利局 |
专利类型 | 发明申请 |
摘要 | An optical amplifier with a semiconductor body comprising a layer structure grown on a substrate 1 with an active layer 4 situated between two cladding layers (2, 3) with a strip-shaped amplification region bounded by two end surfaces (7, 8) which form the input and output surfaces of the radiation to be amplified. The active layer comprises a number of quantum well (QW) layers 4A with direct band transition, which are separated by barrier layers 4B of a different semiconductor material. According to the invention, the material, the number, and the thickness of the QW layers 4A and the barrier layers 4B in combination with the length l of the amplification region are chosen in such a way that two optical transitions can take place in the active layer 4, maximum amplification occurring at a certain current density through the PN junction for the radiation wavelengths corresponding to these optical transitions, while the end surfaces (7, 8) are provided with an anti-reflection layer 9 which has a reflection coefficient R of at most 0,5% for these two wavelengths. An anti-reflection layer made up of four layers of alternately titanium oxide and aluminium oxide is advantageously used. |
其他摘要 | 一种具有半导体本体的光学放大器,包括在衬底1上生长的层结构,其中有源层4位于两个包层(2,3)之间,带状的放大区域由两个端面(7,8)界定,形成两个端面(7,8)待放大的辐射的输入和输出表面。有源层包括多个具有直接带转变的量子阱(QW)层4A,其由不同半导体材料的阻挡层4B分开。根据本发明,选择QW层4A和阻挡层4B的材料,数量和厚度以及放大区域的长度l,使得在活动中可以发生两个光学转变。第4层,对应于这些光学跃迁的辐射波长,通过PN结以特定电流密度发生最大放大,而端面(7,8)设有抗反射层9,其反射系数R为这两个波长最多为0.5%。有利地使用由四层交替的氧化钛和氧化铝构成的抗反射层。 |
申请日期 | 1990-10-24 |
专利号 | EP0426239A1 |
专利状态 | 失效 |
申请号 | EP1990202835 |
公开(公告)号 | EP0426239A1 |
IPC 分类号 | G02B6/12 | G02F1/35 | H01S5/00 | H01S5/028 | H01S5/227 | H01S5/34 | H01S5/343 | H01S5/50 | H01S3/025 | H01S3/19 | H01S3/25 |
专利代理人 | - |
代理机构 | SMEETS, EUGENIUS THEODORUS J. M. |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/87073 |
专题 | 半导体激光器专利数据库 |
作者单位 | PHILIPS ELECTRONICS N.V. |
推荐引用方式 GB/T 7714 | VERBEEK, BASTIAAN HENDRIK,VAN ES-SPIEKMAN, WILMA,HENDRIX, LEONARDUS JOANNES MARIA. Optical amplifier. EP0426239A1[P]. 1991-05-08. |
条目包含的文件 | 条目无相关文件。 |
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