Xi'an Institute of Optics and Precision Mechanics,CAS
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其他题名 | - |
KAWADA HATSUMI; YAMAMOTO MOTOYUKI; NAGASAKA HIROKO | |
1993-10-19 | |
专利权人 | TOKYO SHIBAURA ELECTRIC CO |
公开日期 | 1993-10-19 |
授权国家 | 日本 |
专利类型 | 授权发明 |
摘要 | PURPOSE:To ensure the yield of built-in waveguide effect by the difference in effective index, to implement a low threshold value and to oscillate a stable lateral mode at high output power, by providing a structure of two or more coating layers, and specifying the width of a stripe groove and the distance between waveguides. CONSTITUTION:On the (100) surface of an N-GaAs substrate 11, an N-GaAlAs clad layer 12, an undoped GaAlAs active layer 13, a P-GaAlAs clad layer 14 and an N-GaAs current blocking layer 15 are sequentially grown. Photoresist 21 is applied on the layer 15. A stripe shaped window is formed in the resist. Selective etching is performed to the intermediate part of the layer 14 through the layer 15, and a groove 22 is formed. A width W of the bottom surface and a distance (h) from the bottom surface to the active layer 13 are made to be 0.7<=W<=2.0mum and 0.5<=hmum. The resist layer 21 is removed. A P-GaAlAs coating layer 16, a P-GaAlAs coating layer 17 and a P-GaAs contact layer 18 having the different compositions are formed. Electrodes 19 and 20 are formed. Cleavage is performed and a laser element is obtained. |
其他摘要 | 用途:通过有效指数的差异确保内置波导效应的产量,实现低阈值并在高输出功率下振荡稳定的横向模式,通过提供两个或更多涂层的结构,并指定条纹槽的宽度和波导之间的距离。组成:在N-GaAs衬底11的(100)表面上,依次生长N-GaAlAs包层12,未掺杂的GaAlAs有源层13,P-GaAlAs包层14和N-GaAs电流阻挡层15 。将光致抗蚀剂21施加在层15上。在抗蚀剂中形成条形窗口。通过层15对层14的中间部分进行选择性蚀刻,并形成凹槽22。底表面的宽度W和从底表面到有源层13的距离(h)为0.7≤W≤2.0μm和0.5≤hmum。去除抗蚀剂层21。形成具有不同组成的P-GaAlAs涂层16,P-GaAlAs涂层17和P-GaAs接触层18。形成电极19和20。进行切割并获得激光元件。 |
申请日期 | 1985-03-27 |
专利号 | JP1993074957B2 |
专利状态 | 失效 |
申请号 | JP1985062307 |
公开(公告)号 | JP1993074957B2 |
IPC 分类号 | H01S | H01S5/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/87045 |
专题 | 半导体激光器专利数据库 |
作者单位 | TOKYO SHIBAURA ELECTRIC CO |
推荐引用方式 GB/T 7714 | KAWADA HATSUMI,YAMAMOTO MOTOYUKI,NAGASAKA HIROKO. -. JP1993074957B2[P]. 1993-10-19. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1993074957B2.PDF(338KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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