Xi'an Institute of Optics and Precision Mechanics,CAS
| Optical semiconductor equipment | |
| 其他题名 | Optical semiconductor equipment |
| NAKAHARA, KOUJI; TSUCHIYA, TOMONOBU; TAIKE, AKIRA; SHINODA, KAZUNORI | |
| 2004-05-27 | |
| 专利权人 | LUMENTUM JAPAN, INC. |
| 公开日期 | 2004-05-27 |
| 授权国家 | 美国 |
| 专利类型 | 发明申请 |
| 摘要 | The prior art distributed feedback laser having an InGaAlAs active layer involves a problem that its laser characteristics are deteriorated at high temperature due to the high device resistance. According to the present invention, a ridge type laser is fabricated by: forming an InGaAlAs-MQW layer 104 on a n-type InP substrate 101; growing a p-type InGaAlAs-GRIN-SCH layer 105, a p-type InAlAs electron stopping layer 106 and a p-type grating layer 107 in this order on the InGaAlAs-MQW layer 104; forming a grating; and regrowing a p-type InP cladding layer 108 and a p-type InGaAs contact layer in this order. The concave depth of the grating is smaller than the thickness of the p-type grating layer 107. |
| 其他摘要 | 具有InGaAlAs有源层的现有技术的分布式反馈激光器存在的问题是，由于高的器件电阻，其激光器特性在高温下劣化。根据本发明，通过以下方式制造脊型激光器：在n型InP衬底101上形成InGaAlAs-MQW层104;在InGaAlAs-MQW层104上依次生长p型InGaAlAs-GRIN-SCH层105，p型InAlAs电子阻挡层106和p型栅格层107;形成光栅;并按此顺序再生长p型InP包层108和p型InGaAs接触层。光栅的凹入深度小于p型光栅层107的厚度。 |
| 申请日期 | 2003-06-27 |
| 专利号 | US20040099859A1 |
| 专利状态 | 授权 |
| 申请号 | US10/606834 |
| 公开（公告）号 | US20040099859A1 |
| IPC 分类号 | H01S5/12 | H01S5/20 | H01S5/34 | H01S5/343 | H01L33/00 | H01S5/00 | H01L29/06 |
| 专利代理人 | - |
| 代理机构 | - |
| 文献类型 | 专利 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/86906 |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUMENTUM JAPAN, INC. |
| 推荐引用方式 GB/T 7714 | NAKAHARA, KOUJI,TSUCHIYA, TOMONOBU,TAIKE, AKIRA,et al. Optical semiconductor equipment. US20040099859A1[P]. 2004-05-27. |
| 条目包含的文件 | 条目无相关文件。 | |||||
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