Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor light emitting device | |
其他题名 | Semiconductor light emitting device |
NISHIKAWA YASUMI; FUJIWARA KENZO | |
1987-04-13 | |
专利权人 | MITSUBISHI ELECTRIC CORP |
公开日期 | 1987-04-13 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To eliminate necessity of incorporating an electronic device in a TJS semiconductor laser and reduce the size and improve operation speed and reliability by giving the function of the electronic device to the TJS semiconductor laser. CONSTITUTION:A current flows from a P-type electrode 21 to an N-type electrode 22 and carrier recombination is created in a homogeneous junction part 29-a in a GaAs active layer 25 and laser oscillation is induced. In the N-type region, the flow of electrons is controlled by a gate electrode 30 and the function of current modulation is achieved. The gate electrode 30 is provided on the GaAs active layer 25 and quantity of electrons flowing into the P-type region is varied by applying a gate voltage to the gate electrode and expanding a depletion layer in the active layer 25 by a barrier potential of a Schottky junction. In order to avoid current leakage from the active layer 26, an AlGaAs cladding layer 26 is not doped. Therefore, if the current flowing through the homogeneous junction part 29-a is controlled at near the threshold current by adjusting the small gate voltage, a laser light signal can be modulated. |
其他摘要 | 目的:通过将电子器件的功能提供给TJS半导体激光器,消除将电子器件集成到TJS半导体激光器中的必要性,并减小尺寸并提高操作速度和可靠性。组成:电流从P型电极21流到N型电极22,并且在GaAs有源层25中的均匀结部分29-a中产生载流子复合,并诱发激光振荡。在N型区域中,电子流由栅电极30控制,并且实现电流调制的功能。栅电极30设置在GaAs有源层25上,并且通过向栅电极施加栅电压并通过a的势垒电势扩展有源层25中的耗尽层来改变流入P型区的电子量。肖特基结。为了避免来自有源层26的电流泄漏,不掺杂AlGaAs包层26。因此,如果通过调节小栅极电压将流过均匀结部分29-a的电流控制在接近阈值电流,则可以调制激光信号。 |
申请日期 | 1985-10-03 |
专利号 | JP1987079688A |
专利状态 | 失效 |
申请号 | JP1985220638 |
公开(公告)号 | JP1987079688A |
IPC 分类号 | H01S5/00 | H01S5/026 | H01S5/042 | H01S5/06 | H01S3/103 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/86793 |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | NISHIKAWA YASUMI,FUJIWARA KENZO. Semiconductor light emitting device. JP1987079688A[P]. 1987-04-13. |
条目包含的文件 | ||||||
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JP1987079688A.PDF(192KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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