Semiconductor laser device and manufacture thereof

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor laser device and manufacture thereof
其他题名	Semiconductor laser device and manufacture thereof
	SEMURA SHIGERU; KURODA TAKARO; OOTA TSUNEAKI; NAKAJIMA HISAO
	1986-10-24
专利权人	AGENCY OF IND SCIENCE & TECHNOL
公开日期	1986-10-24
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To stabilize an oscillation wavelength, and to obtain a large optical output by arranging a plurality of light-emitting regions having quantum well type structure in series and constituting a residual region by a semiconductor having the man composition of two kinds of compound semiconductors organizing the same structure. CONSTITUTION:A P-type semiconductor layer 2 is formed onto a P-type semiconductor 1 as a lower clad layer. An active layer 4 is shaped onto the layer 2. A plurality of striped light-emitting regions 8a, 8b having quantum well type structure are disposed in series with the direction of a laser resonator at the center of the layer 4 at regular intervals 6b. The left and right both regions 6a of the regions 8a, 8b and the interval 6b are constituted by a semiconductor having the mean composition of two kinds of compound semiconductors organizing quantum well type structure. Consequently, the forbidden band width of the regions is made larger than that of the light-emitting regions, and a refractive index thereof is made smaller than those of the light-emitting regions. An N-type semiconductor layer 3 is formed onto the layer 4 as an upper clad layer. According to such formation, an oscillation wavelength is stabilized, and a large optical output is acquired by small modulation currents.
其他摘要	目的：通过将具有量子阱型结构的多个发光区域串联排列并通过具有两种化合物半导体组成的人体组成的半导体构成残留区域来稳定振荡波长并获得大的光输出相同的结构。组成：P型半导体层2形成在P型半导体1上作为下包层。有源层4成形在层2上。具有量子阱型结构的多个条形发光区域8a，8b以规则间隔6b与激光谐振器的方向串联设置在层4的中心。区域8a，8b的左右两个区域6a和间隔6b由具有组成量子阱型结构的两种化合物半导体的平均组成的半导体构成。因此，使区域的禁带宽度大于发光区域的禁带宽度，并使其折射率小于发光区域的折射率。在层4上形成N型半导体层3作为上包层。根据这种形成，振荡波长稳定，并且通过小调制电流获得大的光输出。
申请日期	1985-04-17
专利号	JP1986239686A
专利状态	失效
申请号	JP1985080062
公开（公告）号	JP1986239686A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/86750
专题	半导体激光器专利数据库
作者单位	AGENCY OF IND SCIENCE & TECHNOL
推荐引用方式 GB/T 7714	SEMURA SHIGERU,KURODA TAKARO,OOTA TSUNEAKI,et al. Semiconductor laser device and manufacture thereof. JP1986239686A[P]. 1986-10-24.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
JP1986239686A.PDF（362KB）	专利		开放获取	CC BY-NC-SA	请求全文