Semiconductor laser diode and manufacture thereof

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	Semiconductor laser diode and manufacture thereof
其他题名	Semiconductor laser diode and manufacture thereof
	NOMURA HIDENORI
	1984-10-25
专利权人	NIPPON DENKI KK
公开日期	1984-10-25
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To enable to manufacture a high performance semiconductor layer diode in good reproducibility and yield by increasing the depth of grating grooves of a diffraction grating made of InGaAsP semiconductor layer as compared with the thickness of the semiconductor layer which forms the diffraction grating. CONSTITUTION:A semiconductor laser diode has a buffer layer 2 made of N type InP epitaxially grown on N type InP substrate 1 of conductive type, a diffraction grating layer 3 made of an N type In0.81Ga0.19As0.43P0.57, an isolating layer 4, an active layer 5, an enclosed layer 6, an electrode forming layer 7 and an N type side electrode 9 and a striped P-side electrode 8. The depth of the grating groove 3a is larger than the thickness of the layer 3, and the layer 3 is completely isolated in a grating shape. After the groove are formed on the layer of AnGaAsP composition which is relatively hardly thermally decomposed, the upper semiconductor layer is epitaxially grown. Accordingly, the deformation of the periodic grating groove structure in the step of epitaxially growing is extremely less, thereby manufacturing a semiconductor laser diode of good characteristics in good reproducibility and high yield.
其他摘要	目的：通过增加由InGaAsP半导体层制成的衍射光栅的光栅槽的深度与形成衍射光栅的半导体层的厚度相比，能够以良好的再现性和良率制造高性能半导体层二极管。组成：半导体激光二极管有一个缓冲层2，由N型InP制成，外延生长在导电型N型InP衬底1，衍射光栅层3由N型In0.81Ga0.19As0.43P0.57制成，隔离层4，有源层5，封闭层6，电极形成层7和N型侧电极9以及条纹P侧电极8.光栅槽3a的深度大于层3的厚度并且层3完全以光栅形状隔离。在相对难以热分解的AnGaAsP组合物层上形成沟槽之后，外延生长上半导体层。因此，在外延生长步骤中周期性光栅沟槽结构的变形极小，从而制造出具有良好再现性和高产率的良好特性的半导体激光二极管。
申请日期	1983-04-08
专利号	JP1984188187A
专利状态	失效
申请号	JP1983061719
公开（公告）号	JP1984188187A
IPC 分类号	H01S5/00 \| H01S5/12 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/86733
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	NOMURA HIDENORI. Semiconductor laser diode and manufacture thereof. JP1984188187A[P]. 1984-10-25.

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