Manufacture of semiconductor device

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	Manufacture of semiconductor device
其他题名	Manufacture of semiconductor device
	TAKEUCHI TATSUYA; KURAMATA AKITO
	1992-04-28
专利权人	FUJITSU LTD
公开日期	1992-04-28
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a large optical output and to form a flat surface by growing at a first temperature for obtaining large optical output characteristic at the initial of growth, and then growing at a second temperature higher than the first temperature to obtain flatness and high resistance. CONSTITUTION:A growth is conducted at 570 deg.C for 5min at the initial growth having largest influence to optical output characteristic by an organic metal vapor growing method (MOVPE method), the growing temperature is raised to 620 deg.C during 3min thereafter, and then grown at 620 deg.C for easily obtaining flatness for 30min. In this case, growing temperatures of 520, 620 deg.C are so controlled by a temperature controlled as to become constant. In this case, Fe- doping gas flow rate is varied by considering the growing temperature and the growing surface orientation at the initial of growing. That is, it is reduced to 15cc in first 5min, then reduced to 10cc in the following 3min, and set to 10cc in 30min. A semiconductor laser obtained in this manner is formed with InP Fe-doped high resistance buried layers 13 with excellent flatness at both sides of an active layer 11 and a laser clad layer 12 formed on an n-type InP board 10.
其他摘要	用途：通过在第一温度下生长获得大的光输出并形成平坦表面，以在生长初期获得大的光输出特性，然后在高于第一温度的第二温度下生长，以获得平坦度和高电阻。组成：在初始生长的570℃下进行生长5分钟，通过有机金属蒸汽生长方法（MOVPE方法）对光输出特性影响最大，生长温度在此后3分钟内升高到620℃，然后在620℃下生长，以便容易地获得平整度30分钟。在这种情况下，520,620℃的生长温度由控制为恒定的温度控制。在这种情况下，通过考虑生长温度和生长初期的生长表面取向来改变Fe掺杂气体流速。也就是说，在最初的5分钟内降至15cc，然后在接下来的3分钟内降至10cc，并在30分钟内降至10cc。以这种方式获得的半导体激光器由InP Fe掺杂的高电阻掩埋层13形成，其在有源层11和形成在n型InP板10上的激光熔覆层12的两侧具有优异的平坦度。
申请日期	1990-09-18
专利号	JP1992127490A
专利状态	失效
申请号	JP1990248368
公开（公告）号	JP1992127490A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/86687
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	TAKEUCHI TATSUYA,KURAMATA AKITO. Manufacture of semiconductor device. JP1992127490A[P]. 1992-04-28.

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