Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	NOJIRI HIDEAKI; HARA TOSHITAMI; SEKIGUCHI YOSHINOBU; HASEGAWA MITSUTOSHI; MIYAZAWA SEIICHI
	1987-11-21
专利权人	CANON INC
公开日期	1987-11-21
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To eliminate contamination and the like to be developed after cleaving a general LD and easily make laser beams coming from many points parallel by causing an active layer to have multi quantum-wells and laser beam emission surfaces to be in disorder to serve as a protective coat. CONSTITUTION:Five laminations for N-type GaAs 22, N-type AlGaAs layer 23, non- doping GaAs, and Al0.2Ga0.8As are performed repeatedly on an N-type GaAs substrate 21 according to a molecular beam epitaxy system and finally an GaAs is laminated, resulting in the formation of active areas 24 having multi-quantum wells. In addition, the above areas make two layers; i.e. P-type AlGaAs layer 25, and P GaAs layer 26 grow in sequence to form Si3N4 according to a plasma CVD. After its Si3N4 in a given area is removed, impurities are diffused to develop a mixed crystal 18 and Si3N4 of the rest is processed by etching in order to form a part applied by an electric current 20 and then, Cr-Au is converted into an ohmic electrode 28 by vapor-deposition and after that, etching is performed to separate its electrode, resulting in the formation of non-impregnation area 19 as a remainder. In the next place, an ohmic electrode 29 for N-type of the rear side is formed and is treated by heating and also a resonance face R making anglestheta1 and theta2 is processed vertically according to a reactive ion etching.
其他摘要	目的：消除一般LD后的待开发污染等，并通过使有源层具有多量子阱和激光束发射表面无序而容易地使多个点平行的激光束发生作为保护外套。组成：根据分子束外延系统，在N型GaAs衬底21上重复进行N型GaAs 22，N型AlGaAs层23，非掺杂GaAs和Al0.2Ga0.8As的五次叠层，最后是层叠GaAs，导致形成具有多量子阱的有源区24。另外，上述区域分为两层;即，根据等离子体CVD，P型AlGaAs层25和P + GaAs层26依次生长以形成Si3N4。在除去给定区域中的Si3N4之后，杂质扩散以形成混晶18，并且通过蚀刻处理其余的Si3N4，以形成由电流20施加的部分，然后，将Cr-Au转化为通过气相沉积形成欧姆电极28，然后进行蚀刻以分离其电极，从而形成作为剩余部分的非浸渍区域19。接下来，形成用于N型后侧的欧姆电极29并通过加热处理，并且还根据反应离子蚀刻垂直地处理角度θ1和θ2的谐振面R.
申请日期	1986-05-19
专利号	JP1987269385A
专利状态	失效
申请号	JP1986114013
公开（公告）号	JP1987269385A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/86644
专题	半导体激光器专利数据库
作者单位	CANON INC
推荐引用方式 GB/T 7714	NOJIRI HIDEAKI,HARA TOSHITAMI,SEKIGUCHI YOSHINOBU,et al. Semiconductor laser device. JP1987269385A[P]. 1987-11-21.

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