Integrated semiconductor laser device

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	Integrated semiconductor laser device
其他题名	Integrated semiconductor laser device
	WATANABE YUKIO; MOGI NAOTO
	1986-08-14
专利权人	株式会社東芝
公开日期	1986-08-14
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain an integrated semiconductor device having excellent heat- dissipating characteristics by extending a semiconductor layer constituting a semiconductor photodetecting element, directly bonding a contact layer for a semiconductor laser device onto the the semiconductor layer, dividing these semiconductor layer and contact layer at fine intervals and each facing the divided devices. CONSTITUTION:An i-type semiconductor substrate 21 constituting an integrated semiconductor photodetecting element 20 is fixed onto a stem 10 made of copper by using adhesives, an N-type layer 22 is deposited on the substrate 21, and a P-type region 23 is diffused and formed near one end section of the layer 22, thus shaping a P-N photodiode. Consequently, the region 23 is employed as a light-receiving section 24, a p electrode 26 is applied to the light-receiving section 24, and p electrodes 60 used in common with p electrodes for an afterward shaped integrated semiconductor laser element 30 are formed onto the layer 22. A P-type GaAs contact layer 35, a P-type GaAlAs clad layer 34, a GaAs active layer 33, an N-type GaAlAs clad layer 32, an N-type GaAs substrate 31 and an N electrode 36 constituting the element 30 are laminated and shaped at the other end section of the layer 22, and the elements 20 and 30 are each divided and these are faced.
其他摘要	目的：通过延伸构成半导体光电探测元件的半导体层，将半导体激光器件的接触层直接键合到半导体层上，将这些半导体层和接触层分开，以获得具有优良散热特性的集成半导体器件间隔和每个面向分开的设备。组成：通过使用粘合剂将构成集成半导体光电检测元件20的i型半导体基板21固定到由铜制成的杆10上，在基板21上沉积N型层22，并且P型区域23是在层22的一个末端部分附近扩散并形成，从而使PN光电二极管成形。因此，区域23用作光接收部分24，p电极26被施加到光接收部分24，并且用于后续形状的集成半导体激光器元件30的p电极共用的p电极60形成到层22.P型GaAs接触层35，P型GaAlAs包层34，GaAs活性层33，N型GaAlAs包层32，N型GaAs基板31和N电极36构成元件30在层22的另一端部层叠并成形，元件20和30各自分开并且面对。
申请日期	1985-02-08
专利号	JP1986182291A
专利状态	失效
申请号	JP1985021875
公开（公告）号	JP1986182291A
IPC 分类号	H01L27/15 \| H01S5/00 \| H01S5/026 \| H01S5/40 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/86494
专题	半导体激光器专利数据库
作者单位	株式会社東芝
推荐引用方式 GB/T 7714	WATANABE YUKIO,MOGI NAOTO. Integrated semiconductor laser device. JP1986182291A[P]. 1986-08-14.

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