Semiconductor light emitting device

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	Semiconductor light emitting device
其他题名	Semiconductor light emitting device
	SAKAI KAZUO; KUSHIRO YUKITOSHI; NISHIMURA KIMISUKE
	1990-08-13
专利权人	KOKUSAI DENSHIN DENWA CO LTD
公开日期	1990-08-13
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To effectively introduce output light into external medium by constituting an optical waveguide layer of transition metal element, and rotating the plane of polarization of the output light of the laser region by magnetic field from a magnetic field applying part. CONSTITUTION:In a semiconductor light emitting element part A, the following are formed on the same semiconductor substrate; a laser region A1 which emits light, and an optical waveguide region A2 having a semiconductor waveguide layer arranged so as to couple with the output light from the region A The emitted light from the region A1 is output in the direction of the region A2 constituting refractive index waveguide structure to control a transversal mode. On the surface of an optical waveguide layer 4 in the region A1, a 1/4 wavelength shift circuit 15 is formed. TE mode light enters an optical waveguide layer 9 in the region A2. Magnetic field having a component parallel with the optical axis of the optical waveguide layer 9 is applied by a magnetic field applying part B. As the result, Faraday effect generates and the plane of polarization rotates, so that the output light is effectively introduced into external medium.
其他摘要	目的：通过构成过渡金属元件的光波导层，并通过来自磁场施加部分的磁场旋转激光区域的输出光的偏振面，有效地将输出光引入外部介质。组成：在半导体发光元件部分A中，以下形成在同一半导体基板上;发光的激光区域A1和具有半导体波导层的光波导区域A2，所述半导体波导层布置成与来自区域A1的输出光耦合。来自区域A1的发射光在构成折射率波导结构的区域A2的方向上输出，以控制横向模式。在区域A1中的光波导层4的表面上，形成1/4波长移位电路15。 TE模式光进入区域A2中的光波导层9。通过磁场施加部分B施加具有与光波导层9的光轴平行的分量的磁场。结果，产生法拉第效应并且偏振面旋转，使得输出光有效地引入外部。介质。
申请日期	1989-02-01
专利号	JP1990203582A
专利状态	失效
申请号	JP1989020831
公开（公告）号	JP1990203582A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/86461
专题	半导体激光器专利数据库
作者单位	KOKUSAI DENSHIN DENWA CO LTD
推荐引用方式 GB/T 7714	SAKAI KAZUO,KUSHIRO YUKITOSHI,NISHIMURA KIMISUKE. Semiconductor light emitting device. JP1990203582A[P]. 1990-08-13.

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