Semiconductor device with epitaxially grown active layer adjacent a subsequently grown optically passive region

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	Semiconductor device with epitaxially grown active layer adjacent a subsequently grown optically passive region
其他题名	Semiconductor device with epitaxially grown active layer adjacent a subsequently grown optically passive region
	LUKAS CZORNOMAZ; MIRJA RICHTER; HEIKE E. RIEL; JENS HOFRICHTER
	2014-05-07
专利权人	INTERNATIONAL BUSINESS MACHINES CORPORATION
公开日期	2014-05-07
授权国家	英国
专利类型	发明申请
摘要	A semiconductor device 1 comprising an optically passive aspect 2 and an optically active material 3 wherein the optically passive aspect 2 further comprises at least a crystalline seed layer (4), the optically active material 3 being epitaxially grown in a predefined structure 5 provided in the optically passive aspect 2 that extends to at least an upper surface 4 of the seed layer 4, and the optically passive aspect 2 is structured to comprise a passive photonic structure 6 subsequent to the growth of the optically active material 3. The active material 3 may be implemented as a light emitting structure e.g. a laser, an LED or a optical amplifier amongst others. The predefined structure 5 may be a hole or a trench. The photonic structure 6 may be a waveguide. The device may include a VCSEL. Holes (11 in figure 4) may be formed in the photonic structure 6 and the active region 3. The size of the holes may be tapered to increase towards the photonic structure 6 or may be the same size. The device may comprise a 2D photonic crystal.
其他摘要	一种半导体器件1，包括光学无源方面2和光学活性材料3，其中光学无源方面2还包括至少一个晶种层（4），光学活性材料3外延生长在预定结构5中。光学无源方面2延伸到种子层4的至少上表面4，并且光学无源方面2被构造成在光学活性材料3生长之后包括无源光子结构6。活性材料3可以实施为发光结构，例如激光器，LED或光放大器等。预定义结构5可以是孔或沟槽。光子结构6可以是波导。该设备可以包括VCSEL。孔（图4中的11）可以形成在光子结构6和有源区3中。孔的尺寸可以是锥形的，以朝向光子结构6增加或者可以是相同的尺寸。该装置可包括2D光子晶体。
申请日期	2012-10-31
专利号	GB2507512A
专利状态	失效
申请号	GB2012019595
公开（公告）号	GB2507512A
IPC 分类号	H01L33/10 \| G02B6/43 \| H01S5/00 \| H01S5/026
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/86137
专题	半导体激光器专利数据库
作者单位	INTERNATIONAL BUSINESS MACHINES CORPORATION
推荐引用方式 GB/T 7714	LUKAS CZORNOMAZ,MIRJA RICHTER,HEIKE E. RIEL,et al. Semiconductor device with epitaxially grown active layer adjacent a subsequently grown optically passive region. GB2507512A[P]. 2014-05-07.

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