Semiconductor optical function element

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	Semiconductor optical function element
其他题名	Semiconductor optical function element
	HINO ISAO; IWAMOTO KUNIAKI
	1982-12-20
专利权人	NIPPON DENKI KK
公开日期	1982-12-20
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To introduce oscillating beams efficiently to a striped three-dimensional photo-waveguide section from a rectilinear striped laser oscillator by eachforming the oscillator section and the photo-waveguide section at a predetermined interval from the oscillator section onto a semiconductor substrate by laminates and burying a section between the oscillator section and the photo-waveguide section by a single semiconductor layer. CONSTITUTION:An N type Al Ga1- As layer 12, an N type Al Ga1- As layer 13, an N type, P type or un-doped AlxGa1-xAs active layer 14, a P type Al Ga1- As layer 15 and a P type Al Ga1- As layer 16 are rectilinearly laminated and shaped onto the N type GaAs substrate 11 in striped form, and the striped section is used as the laser oscillator section. An N type Al Ga1- layer 17, an N type AlyGa1-yAs layer 18 and an N type Al Ga1- As layer 19, energy gaps thereof are larger than the layer 14, are each grown similarly onto the substrate 11 in striped form at the interval from the oscillator section, and the striped section is employed as the three-dimensional photo-waveguide section. Sections except these sections are buried by the N type AlzGa1-zAs layer 20, and the optical function element is obtained.
其他摘要	目的：通过层叠和掩埋，将振荡器部分和光波导部分以预定间隔从振荡器部分形成到半导体衬底上，从直线条纹激光振荡器有效地将振荡光束引入条纹三维光波导部分振荡器部分和光波导部分之间的部分由单个半导体层构成。组成：N型Al Ga1-As层12，N型Al Ga1-As层13，N型，P型或未掺杂AlxGa1-xAs有源层14，P型AlGa1-As层15和P型Al Ga1-As层16以条纹形式直线层叠并成形在N型GaAs衬底11上，条形部分用作激光振荡器部分。 N型Al Ga1-层17，N型AlyGa1-yAs层18和N型AlGa1-As层19，其能隙大于层14，各自以条纹形式类似地生长在基板11上。来自振荡器部分的间隔和条纹部分用作三维光波导部分。除了这些部分之外的部分被N型AlzGa1-zAs层20掩埋，并且获得光学功能元件。
申请日期	1981-06-16
专利号	JP1982207387A
专利状态	失效
申请号	JP1981092496
公开（公告）号	JP1982207387A
IPC 分类号	H01L27/15 \| H01L27/14 \| H01S5/00 \| H01S5/227 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/85251
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	HINO ISAO,IWAMOTO KUNIAKI. Semiconductor optical function element. JP1982207387A[P]. 1982-12-20.

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