Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser device | |
其他题名 | Semiconductor laser device |
NAKAMURA MICHIHARU; UMEDA JIYUNICHI; KURODA IKUROU; YAMASHITA SHIGEO | |
1982-10-23 | |
专利权人 | HITACHI SEISAKUSHO KK |
公开日期 | 1982-10-23 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To obtain a laser having single stability for longitudinal and lateral modes and no excess optical noise component against a modulation signal by a method wherein an N type GaAlAs layer, GaAs active layer, P type GaAlAs layer are stacked and epitaxially grown on an N type GaAs substrate having a groove at the central section and cyclic projections and recesses are provided on the surface of the P type layer. CONSTITUTION:A recessed groove 9 with a depth of 5mum and a width of 2- 8mum is digged in the direction[011]on an N type GaAs substrate 1 having a (100) plane, and an N type Ga1-xAlxAs (x 0.3) layer 2, GaAs active layer 3, and P type Ga1-yAlyAs (y 0.3) layer 4 are stacked on the whole surface of the substrate 1 for liquidus epitaxial growth while burying the groove. Next, a diffraction grating 8 with a cycle of 3,700Angstrom and a depth of 1,500Angstrom is formed on the surface of the layer 4 by using an interference exposure method used laser light and a chemical etching method at the same time and a P type Ga1-zAlzAs (z 0.1) layer 5 is grown on the whole surface of the layer 4 including the diffraction grating 8. After that, Zn is diffused by corresponding to the groove 9 and a Cr-Au electrode 7 is formed on the layer 5 and an Au-Ge-Ni electrode 6 is installed on the rear of the substrate |
其他摘要 | 目的:通过一种方法获得一种对纵向和横向模式具有单一稳定性且对调制信号没有过多光学噪声分量的激光器,其中N型GaAlAs层,GaAs有源层,P型GaAlAs层堆叠并在N上外延生长在P型层的表面上设置有在中心部分具有凹槽的GaAs衬底和环形凸起和凹陷。组成:在具有(100)平面的N型GaAs衬底1和N型Ga1-xAlxAs(x)的方向[011]上挖出深度为5μm,宽度为2-8μm的凹槽9。0.3)层2,GaAs有源层3和P型Ga1-yAlyAs(y0.3)层4堆叠在基板1的整个表面上,用于液相外延生长,同时掩埋沟槽。接下来,通过使用激光和化学蚀刻方法同时使用干涉曝光方法和P型Ga1,在层4的表面上形成周期为3,700埃且深度为1,500埃的衍射光栅8。-zAlzAs(z 0.1)层5在包括衍射光栅8的层4的整个表面上生长。之后,Zn对应于沟槽9扩散,并且在层5上形成Cr-Au电极7。Au-Ge-Ni电极6安装在基板1的后部。 |
申请日期 | 1982-03-19 |
专利号 | JP1982172791A |
专利状态 | 失效 |
申请号 | JP1982042766 |
公开(公告)号 | JP1982172791A |
IPC 分类号 | H01S5/00 | H01S5/12 | H01S5/223 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/85243 |
专题 | 半导体激光器专利数据库 |
作者单位 | HITACHI SEISAKUSHO KK |
推荐引用方式 GB/T 7714 | NAKAMURA MICHIHARU,UMEDA JIYUNICHI,KURODA IKUROU,et al. Semiconductor laser device. JP1982172791A[P]. 1982-10-23. |
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JP1982172791A.PDF(303KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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