Semiconductor laser element and semiconductor laser device using it

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	Semiconductor laser element and semiconductor laser device using it
其他题名	Semiconductor laser element and semiconductor laser device using it
	KOBAYASHI MASAMICHI; HOTSUCHI CHIYOKO
	1985-01-23
专利权人	HITACHI SEISAKUSHO KK
公开日期	1985-01-23
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To contrive the increase in reliability and the prolongation of life time of the titled device by the prevention of chip inclination and thereby improvement of thermal diffusion by a method wherein the neighborhood of both side edges of the chip is provided with a buried hetero junction in parallel with a buried hetero junction. CONSTITUTION:An N type GaAlAs 4, a GaAs active layer 5, a P type GaAlAs 6, and an N type GaAs 7 are superposed on an N type GaAs substrate 2. Mesa grooves 18 and 19 are provided, and a stripe 20 about 10mum wide and a wider auxiliary stripe 21 are formed. The pitch of the stripe 21 is about 300mum. Next, the burial of a P type GaAlAs blocking layer 9 and an N type GaAlAs 10 in the grooves 18 and 19 by a liquid epitaxial method causes partial swelling. Zn is diffused through an SiO2 mask 11, resulting in the formation of a connection layer 12 reaching the P-layer 6. Au electrodes 13 and 14 are attached, which electrode 13 is formed discontinuously at the center of the stripe 2 Thereafter, the wafer 17 is cut at the center of the stripe 21 and split along a cleavage line in the direction perpendicular to the stripe 20, and accordingly a chip 1 is obtained. The chip 1 does not incline because of the swellings at the center and on both sides, thus being improved in thermal diffusion by uniform wetting to a solder 15; therefore the titled element of high reliability and long life time can be obtained.
其他摘要	目的：通过防止芯片倾斜从而改善热扩散的方法来设计标题器件的可靠性和寿命延长，并通过一种方法来改善热扩散，其中芯片的两个侧边缘附近设有掩埋异质结与掩埋异质结并联。组成：N型GaAlAs 4，GaAs有源层5，P型GaAlAs 6和N型GaAs 7叠加在N型GaAs衬底2上。提供Mesa凹槽18和19，条带20约10μm形成宽的和更宽的辅助条带21。条带21的间距约为300μm。接下来，通过液体外延法在沟槽18和19中埋入P型GaAlAs阻挡层9和N型GaAlAs 10会引起部分膨胀。 Zn通过SiO2掩模11扩散，导致形成到达P层6的连接层12.连接Au电极13和14，该电极13在条带21的中心不连续地形成。晶片17在条带21的中心处被切割并且在垂直于条带20的方向上沿着解理线分开，因此获得芯片1。由于中心和两侧的膨胀，芯片1不倾斜，因此通过均匀润湿焊料15来改善热扩散;因此，可以获得高可靠性和长寿命的标题元素。
申请日期	1983-07-01
专利号	JP1985012785A
专利状态	失效
申请号	JP1983118312
公开（公告）号	JP1985012785A
IPC 分类号	H01S5/00 \| H01S5/042 \| H01S5/227 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/85204
专题	半导体激光器专利数据库
作者单位	HITACHI SEISAKUSHO KK
推荐引用方式 GB/T 7714	KOBAYASHI MASAMICHI,HOTSUCHI CHIYOKO. Semiconductor laser element and semiconductor laser device using it. JP1985012785A[P]. 1985-01-23.

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