Xi'an Institute of Optics and Precision Mechanics,CAS
| Semiconductor element | |
| 其他题名 | Semiconductor element |
| WATABE SHINICHI; TADATOMO KAZUYUKI; SUKEGAWA TOKUZO | |
| 1992-12-04 | |
| 专利权人 | SUKEGAWA TOKUZO |
| 公开日期 | 1992-12-04 |
| 授权国家 | 日本 |
| 专利类型 | 发明申请 |
| 摘要 | PURPOSE:To enhance the brightness in light-emission by a method wherein GaP is used for a substrate and GaInP is used for an active layer. CONSTITUTION:An active layer 4 which uses GaInP as a main component is formed on a substrate 1 which uses GaP as a main component. Since GaP can be grown as a bulk crystal, it can be used for the substrate Since the band gap of GaP is larger than that of GaInP, the GaP is provided with a function as a clad layer 5. In addition, the GaP is transparent with reference to light which is emitted from the active layer 4. Consequently, when the GaP is used for the substrate 1 and the GaInP is used for the active layer 2, radiated light is not absorbed by the substrate As a result, the brightness of a light- emitting operation is enhanced. |
| 其他摘要 | 用途：通过将GaP用于衬底并将GaInP用于有源层的方法来增强发光亮度。组成：使用GaInP作为主要成分的有源层4形成在使用GaP作为主要成分的基板1上。由于GaP可以作为块状晶体生长，因此可以用于衬底由于GaP的带隙大于GaInP的带隙，因此GaP具有作为包层5的功能。此外，GaP参考从有源层4发射的光是透明的。因此，当GaP用于衬底1并且GaInP用于有源层2时，辐射光不被衬底1吸收。结果。，增强了发光操作的亮度。 |
| 申请日期 | 1991-05-28 |
| 专利号 | JP1992350976A |
| 专利状态 | 失效 |
| 申请号 | JP1991153864 |
| 公开（公告）号 | JP1992350976A |
| IPC 分类号 | H01L21/20 | H01L33/10 | H01L33/20 | H01L33/30 | H01S5/00 | H01L33/00 | H01S3/18 |
| 专利代理人 | - |
| 代理机构 | - |
| 文献类型 | 专利 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/85014 |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUKEGAWA TOKUZO |
| 推荐引用方式 GB/T 7714 | WATABE SHINICHI,TADATOMO KAZUYUKI,SUKEGAWA TOKUZO. Semiconductor element. JP1992350976A[P]. 1992-12-04. |
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| JP1992350976A.PDF（107KB） | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 | ||
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