Xi'an Institute of Optics and Precision Mechanics,CAS
Optical integrated element | |
其他题名 | Optical integrated element |
MURATA SHIGERU; KATOU YOSHITAKE | |
1988-12-20 | |
专利权人 | NEC CORP |
公开日期 | 1988-12-20 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To improve a coupling efficiency between a distributed feedback laser and an optical element and provide sufficient electrical isolation by a method wherein the coupling part and the channel part of the distributed feedback laser are filled with high resistance semiconductor which is transparent at the oscillation frequency of the laser. CONSTITUTION:The channel part 140 and the coupling part 120 of a distributed feedback laser (DFB laser) 110 are filled with high resistance semiconductor 107 and a light guide layer 102 is formed over a whole device. The high resistance semiconductor 107 has the same composition as the cladding layer 105 (but a higher resistivity than the cladding layer 105) and hence is transparent for a laser beam and the laser beam is scattered very little in the coupling part 120 and sufficient electrical isolation can be provided. Moreover, as the channel part 140 of the DFB laser 110 is also filled with the high resistance semiconductor 107, a lateral mode can be stabilized and a current can be suppressed to a low level so that the laser with a low threshold and a high efficiency can be obtained. It is to be noted that the DFB laser 110 has a so- called strip buried hetero structure (SBH structure). |
其他摘要 | 目的:提高分布式反馈激光器与光学元件之间的耦合效率,并通过一种方法提供足够的电隔离,其中分布式反馈激光器的耦合部分和沟道部分填充有高频半导体,该半导体在振荡频率下是透明的激光组成:分布式反馈激光器(DFB激光器)110的通道部分140和耦合部分120填充有高阻半导体107,并且在整个器件上形成光导层102。高电阻半导体107具有与包层105相同的组成(但是电阻率高于包层105),因此对于激光束是透明的,并且激光束在耦合部分120中非常少地散射并且具有足够的电隔离可以提供。此外,由于DFB激光器110的沟道部分140也填充有高电阻半导体107,因此可以稳定横向模式并且可以将电流抑制到低水平,使得具有低阈值和高效率的激光器可以获得。应注意,DFB激光器110具有所谓的条带掩埋异质结构(SBH结构)。 |
申请日期 | 1987-06-12 |
专利号 | JP1988311786A |
专利状态 | 失效 |
申请号 | JP1987147680 |
公开(公告)号 | JP1988311786A |
IPC 分类号 | H01S5/00 | H01S5/026 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/84952 |
专题 | 半导体激光器专利数据库 |
作者单位 | NEC CORP |
推荐引用方式 GB/T 7714 | MURATA SHIGERU,KATOU YOSHITAKE. Optical integrated element. JP1988311786A[P]. 1988-12-20. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1988311786A.PDF(252KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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