Semiconductor light emitting device

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	Semiconductor light emitting device
其他题名	Semiconductor light emitting device
	WAKAO KIYOHIDE
	1989-10-23
专利权人	FUJITSU LTD
公开日期	1989-10-23
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To specify a polarizing plane of oscillating rays by a method wherein a dielectric waveguide is provided inside a clad layer above an active layer and the waveguide is formed into a rectangular form in section perpendicular to a direction in which light rays are projected. CONSTITUTION:A planar light emitting type laser comprises a clad layer 6 above an active layer 3 and a dielectric waveguide 71 provided inside a clad layer 9. The waveguide 71 is formed into a rectangular form in section perpendicular to a direction in which light rays are projected. The light rays emitted from the active layer 3 are composed of TM polarized rays (a magnetic field component is always perpendicular to a direction in which light rays travel) and TE polarized rays (an electrical field component is always perpendicular to a direction in which light rays travel). TE polarized rays, which have an electrical field component perpendicular to side faces which include short sides, have a priority over TM polarized rays inside the waveguide 7 Laser rays start to oscillate selectively in a mode of TE polarized rays which have an electrical field component in a direction of long sides of a rectangular section of the waveguide 71 perpendicular to a direction in which light rays are projected. By these processes, oscillating rays are specified in a polarizing plane.
其他摘要	目的：通过一种方法确定振荡射线的偏振面，其中介质波导设置在有源层上方的包层内，并且波导在垂直于投射光线的方向的截面中形成矩形。组成：平面发光型激光器包括在有源层3上方的包层6和设置在包层9内的电介质波导7波导71在垂直于光线方向的截面中形成矩形形状。预计。从有源层3发射的光线由TM偏振光线（磁场分量总是垂直于光线行进的方向）和TE偏振光线（电场分量总是垂直于光的方向）组成。光线旅行）。具有垂直于包括短边的侧面的电场分量的TE偏振光线优先于波导71内部的TM偏振光线。激光射线以具有电场分量的TE偏振光线的模式开始选择性地振荡。在垂直于投射光线的方向的波导71的矩形截面的长边方向上。通过这些过程，在偏振平面中指定振荡射线。
申请日期	1988-04-15
专利号	JP1989265584A
专利状态	失效
申请号	JP1988093802
公开（公告）号	JP1989265584A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/84931
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	WAKAO KIYOHIDE. Semiconductor light emitting device. JP1989265584A[P]. 1989-10-23.

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