Xi'an Institute of Optics and Precision Mechanics,CAS
- | |
其他题名 | - |
YAMAMOTO SABURO; HAYASHI HIROSHI; KANEIWA SHINJI | |
1992-02-04 | |
专利权人 | SHARP KK |
公开日期 | 1992-02-04 |
授权国家 | 日本 |
专利类型 | 授权发明 |
摘要 | PURPOSE:To form a plurality of laser oscillating units of different oscillating wavelengths in a sole element by forming a plurality of oscillating units of different oscillating wavelengths corresponding to the growing velocity of an epitaxially grown layer. CONSTITUTION:After an N type GaAs current blocking layer 2 is liquid phase epitaxially grown on a P type GaAs substrate 1, stripe slots 3, 4 having widths w1, w2 (w1>w2) are formed. The layer 2 is removed in the slots 3, 4, and becomes a current passage. A clad layer 5, an active layer 6, a clad layer 7, and a cap layer 8 are sequentially laminated again by liquid phase epitaxial growth method, thereby forming a double hetero junction type laser operation multilayer crystal layer. Then, the back surface of the substrate 1 is lapped to form the thickness of a wafer to approx. 120mum, a P type side electrode 9 is then formed, while and an N type side electrode 10 is formed on the upper surface of the layer 8. To divide the laser operation multilayer crystal in the units of the slots 3, 4, an isolating slot 11 is formed in parallel with the slots 3, 4, and the multilayer crystal is etched until reaching the substrate |
其他摘要 | 目的:通过形成与外延生长层的生长速度相对应的不同振荡波长的多个振荡单元,在鞋底元件中形成多个不同振荡波长的激光振荡单元。组成:N型GaAs电流阻挡层2是在P型GaAs衬底1上外延生长的液相后,形成宽度为w1,w2(w1> w2)的条纹槽3,4。层2在槽3,4中被移除,并成为电流通道。通过液相外延生长法依次层叠包层5,有源层6,包层7和盖层8,从而形成双异质结型激光器操作多层晶体层。然后,研磨基板1的后表面以形成晶片的厚度至约。然后形成120μm的P型侧电极9,同时在层8的上表面上形成N型侧电极10.为了将激光器操作多层晶体分成槽3,4的单元,隔离槽11与槽3,4平行地形成,并且多层晶体被蚀刻直到到达基板1。 |
申请日期 | 1983-03-09 |
专利号 | JP1992006113B2 |
专利状态 | 失效 |
申请号 | JP1983040342 |
公开(公告)号 | JP1992006113B2 |
IPC 分类号 | H01L21/208 | H01S5/00 | H01S5/06 | H01S5/223 | H01S5/40 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/84742 |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP KK |
推荐引用方式 GB/T 7714 | YAMAMOTO SABURO,HAYASHI HIROSHI,KANEIWA SHINJI. -. JP1992006113B2[P]. 1992-02-04. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1992006113B2.PDF(269KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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