半導体レ-ザ装置

OPT OpenIR > 半导体激光器专利数据库

	半導体レ-ザ装置
其他题名	半導体レ-ザ装置
	粂雅博; 伊藤国雄; 清水裕一; 吉川則之
	1995-04-10
专利权人	松下電器産業株式会社
公开日期	1995-04-10
授权国家	日本
专利类型	授权发明
摘要	PURPOSE:To obtain a semiconductor laser device having excellent characteristics of reflectivity of approximately 60% in the rear end surface of a resonator with superior reproducibility by coating at least one of the end surfaces of the resonator in a semiconductor laser crystal with an Al2O3 film and an Si film. CONSTITUTION:At least one of the end surfaces 2, 3 of a resonator in a semiconductor laser crystal 1 is coated with an Al2O3 film and an Si film. The front end surface 2 of the semiconductor laser crystal 1 is coated with a coated film such as an Al2O3 coated film 3 having a film-thickness 0.5 wavelength, a rear end surface 4 is coated with a coated film such as an Al2O3 coated film 3' having a film-thickness 0.10 wavelength and the coated film 3' is coated with a coated film such as an Si coated film 5 having a 0.28 or 0.36 wavelength, or the rear end surface 4 is coated with a coated film such as an Al2O3 coated film 3' having a film-thickness 0.40 wavelength and the coated film 3' is coated with a coated film such as an Si coated film 5 having a 0.14 or 0.22 wavelength. The reflectivity of the front end surface 2 is brought to approximately 30% and the reflectivity of the rear end surface 4 to approximately 60% at that time, and an output from laser beams 6' emitted from the rear end surface is brought to 0.43 times as high as that from laser beams 6 emitted from the front end surface 2.
其他摘要	目的：通过在具有Al2O3膜的半导体激光晶体中涂覆谐振器的至少一个端面，获得具有优异再现性的谐振器后端表面具有优异的约60％反射率特性的半导体激光器件。一部硅片。组成：半导体激光晶体1中的谐振器的端面2,3中的至少一个端面涂有Al2O3膜和Si膜。半导体激光晶体1的前端表面2涂覆有涂膜，例如膜厚度为0.5波长的Al2O3涂层膜3，后端表面4涂覆有涂层膜，例如Al2O3涂层膜3。 “膜厚度为0.10波长，涂膜3'涂有涂膜，例如波长为0.28或0.36的Si涂膜5，或后端表面4涂有涂膜，如Al2O3涂膜3'的膜厚为0.40，涂膜3'涂有涂膜，例如波长为0.14或0.22的Si涂膜5。此时前端面2的反射率约为30％，后端面4的反射率约为60％，后端面发射的激光束6'的输出达到0.43倍与从前端表面2发射的激光束6一样高。
申请日期	1986-05-06
专利号	JP1995032290B2
专利状态	失效
申请号	JP1986102145
公开（公告）号	JP1995032290B2
IPC 分类号	H01S \| H01S5/028 \| H01S5/00 \| H01S3/18
专利代理人	武田元敏
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/84737
专题	半导体激光器专利数据库
作者单位	松下電器産業株式会社
推荐引用方式 GB/T 7714	粂雅博,伊藤国雄,清水裕一,等. 半導体レ-ザ装置. JP1995032290B2[P]. 1995-04-10.

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