Semiconductor laser

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	Semiconductor laser
其他题名	Semiconductor laser
	KAWANO HIDEO
	1992-04-28
专利权人	NEC CORP
公开日期	1992-04-28
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To realize a lateral mode control small in astigmatic difference by a method wherein the injection width of a current in a lateral mode control type AlGaInP semiconductor laser is set much smaller than the width of an effective refractive index distribution provided in parallel with an active layer. CONSTITUTION:An etching process is carried out with a mixed solution of H3PO4, H2O2, and H2O and an etching solution of H2SO4 as far as a halfway point of a P-(Al0.6Ga0.4)0.5In0.5P clad layer 15, and the clad layer 15 is set as thick as 0.2-0.3mum on both the sides of a stripe-like mesa. Only a P-Ga0.5In0.5P car layer 16 is selectively etched with the mixed solution of H3PO4, H2O2, and H2O to enable the width B of the cap layer 16 to be smaller than the width A of the upper part of the clad layer 15 of the stripe-like mesa by the control of side etching. At this point, as the injection width A of a current for laser oscillation is set much smaller than the width C of an effective refractive index distribution provided in parallel with the active layer 14, the wave front of laser rays is small in distortion and the astigmatic difference becomes smaller than 5mum.
其他摘要	目的：通过一种方法实现散光差小的横向模式控制，其中横向模式控制型AlGaInP半导体激光器中的电流注入宽度设置为远小于与有源折射率分布平行提供的有效折射率分布的宽度。层。组成：使用H3PO4，H2O2和H2O的混合溶液和H2SO4的蚀刻溶液进行蚀刻工艺，直至P-（Al0.6Ga0.4）0.5In0.5P包层15的中点，并且，在条状台面的两侧，包层15的厚度设定为0.2-0.3μm。用H3PO4，H2O2和H2O的混合溶液仅选择性地蚀刻P-Ga0.5In0.5P汽车层16，以使盖层16的宽度B小于包层上部的宽度A.通过侧面蚀刻的控制，条纹状台面的层15。此时，由于激光振荡电流的注入宽度A被设定为远小于与有源层14平行设置的有效折射率分布的宽度C，因此激光射线的波前的畸变很小并且像散差小于5μm。
申请日期	1990-09-19
专利号	JP1992127595A
专利状态	失效
申请号	JP1990249173
公开（公告）号	JP1992127595A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/84672
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	KAWANO HIDEO. Semiconductor laser. JP1992127595A[P]. 1992-04-28.

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